Ultrapure arsenic and its compounds for optical and semiconductor materials

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• 作者：V. A. Fedorov ; M. F. Churbanov
• 关键词：high ; purity arsenic ; compounds ; deep purification ; impurity content
• 刊名：Inorganic Materials
• 出版年：2016
• 出版时间：December 2016
• 年：2016
• 卷：52
• 期：13
• 页码：1339-1357
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Inorganic Chemistry; Industrial Chemistry/Chemical Engineering; Materials Science, general;
• 出版者：Pleiades Publishing
• ISSN：1608-3172
• 卷排序：52

文摘

The article contains a survey of methods of deep purification of elemental arsenic and its compounds used in technology of optical, optoelectronic, and semiconductor materials. Severe requirements on permissible impurity content (ppb level) and features of structure and properties of these substances make the process of their production in the state of high purity unescapably multistage. The physics and chemistry and factors determining efficiency of the developed processing routes and the attained purity level for the arsenic, its oxide, chloride, hydride, and sulfides are described in this paper.