Effect of conditioner load on the polishing pad surface during chemical mechanical planarization process

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• 作者：Cheolmin Shin ; Hongyi Qin ; Seokjun Hong…
• 关键词：Chemical mechanical planarization ; Diamond conditioner ; Material removal rate ; Pad surface ; Pad topography ; Within ; wafer non ; uniformity
• 刊名：Journal of Mechanical Science and Technology
• 出版年：2016
• 出版时间：December 2016
• 年：2016
• 卷：30
• 期：12
• 页码：5659-5665
• 全文大小：
• 刊物类别：Engineering
• 刊物主题：Mechanical Engineering; Vibration, Dynamical Systems, Control; Industrial and Production Engineering;
• 出版者：Korean Society of Steel Construction
• ISSN：1976-3824
• 卷排序：30

文摘

During the Chemical mechanical planarization (CMP), the pad conditioning process can affect the pad surface characteristics. Among many CMP process parameters, the improper applied load on the conditioner arm may have adverse effects on the polyurethane pad. In this work, we evaluated the pad surface properties under the various conditioner arm applied during pad conditioning process. The conditioning pads were evaluated for surface topography, surface roughness parameters such as Rt and Rvk and Material removal rate (MRR) and within-wafer non-uniformity after wafer polishing. We observed that, the pad asperities were collapsed in the direction of conditioner rotation and blocks the pad pores applied conditioner load. The Rvk value and MRR were founded to be in relation with 4 > 1 > 7 kgF conditioner load. Hence, this study shows that, 4 kgF applied load by conditioner is most suitable for the pad conditioning during CMP.