Inducement of Itinerant Electron Transport in Charge-Ordered Pr0.6Ca0.4MnO3 by Ba Doping

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• 作者：N. Ibrahim ; A. K. Yahya
• 关键词：Ba 2+ substitution ; Conduction electronic bandwidth ; Ferromagnetic–paramagnetic transition ; Magnetoresistance ; Manganites
• 刊名：Journal of Superconductivity Incorporating Novel Magnetism
• 出版年：2016
• 出版时间：April 2016
• 年：2016
• 卷：29
• 期：4
• 页码：911-922
• 全文大小：762 KB
• 参考文献：1.Dagotto, E., Hotta, T., Moreo, A.: Phys. Rep. 344, 1–153 (2001)ADS CrossRef
  2.Tokura, Y., Tomioka, Y.: J. Magn. Magn. Mater. 200, 1–23 (1999)ADS CrossRef
  3.Jin, S., Tiefel, T.H., Mc Cormack, M., Fastnacht, R.A., Ramesh, R., Chen, L.H.: Science 264, 413–415 (1994)ADS CrossRef
  4.Zener, C.: Phys. Rev. B 82, 403–405 (1951)ADS CrossRef
  5.Millis, A.J., Shraiman, B.I., Muller, R.: Phy. Rev. Lett. 77, 175–178 (1996)ADS CrossRef
  6.Tomioka, Y., et al.: pp 155–175, Kluwer Academic/Plenum Publisher (1999)
  7.Li, Z.Q., et al.: Physica B. 351, 114–120 (2004)ADS CrossRef
  8.Li, R., Qu, Z., Fang, J.: Physica B 406, 1312–1316 (2011)ADS CrossRef
  9.Li, R., Pi, L., Zhang, Y.: Solid State Commun. 152, 616–620 (2012)ADS CrossRef
  10.Niebieskikwiat, Sanchez, R.D., Caneiro, A.: J. Magn. Magn. Mater. 237, 241–249 (2001)ADS CrossRef
  11.Wang, K.F., Wang, Y., Wang, L.F., Dong, S.: Phys. Rev. B. 73, 134411–1–134411-10 (2006)ADS
  12.Rama, N., Sankaranarayanan, V., Rao, M., SR.: J. Magn. Magn. Mater. 292, 468–475 (2005)ADS CrossRef
  13.Khelifi, J., Tozri, A., Issaoui, F., Dhahri, E., Hlil, E.K.: Ceramics International 40, 1641–1649 (2014)CrossRef
  14.Misra Sushil, K., et al. J. Magn. Magn. Mater. 322(19), 2902–2907 (2010)ADS CrossRef
  15.Narsinga Rao, G., et al.: J. Phys. D: Appl. Phys. 42, 095003 (2009)ADS CrossRef
  16.Hwang, H.Y., et al.: Phys. Rev. Lett. 75(5), 914–917 (1995)ADS CrossRef
  17.Sacanell, J., et al.: J. Phys: Condens. Matter. 19, 186226 (2007)ADS
  18.Kim, K.H., Uehara, M., Hess, C., Sharma, P.A., Cheong, S-W.: Phys. Rev. Lett. 84, 2961 (2000)ADS CrossRef
  19.Hongwei, Qin, et al.: Materials Transaction 45(4), 1251–1254 (2004)CrossRef
  20.Krishna, D.C., Reddy, V.P. J. Alloys Compd. 479, 661–669 (2009)CrossRef
  21.Venkataiah, G., Reddy, V.P.: Solid State Commun. 136, 114–119 (2005)ADS CrossRef
  22.Venkataiah, G., Prasad, V., Reddy, V.P.: J. Alloys Compd. 429, 1–9 (2007)CrossRef
  23.Munirathinam, B., et al.: J. Phys. Chem. Solids 73, 925–930 (2012)ADS CrossRef
  24.Sundaresan, A., et al.: Phys. Rev. B 57, 2690–2693 (1998)ADS CrossRef
  25.Mollah, S., et al.: J. of Magn. Magn. Mater. 284, 383–394 (2004)ADS CrossRef
  26.Dogra, A., et al.: J. Alloys Compd. 493, L19–L24 (2010)CrossRef
  27.Dogra, A., et al.: Supercond. Nov. Magn. 24, 1425–1431 (2011)CrossRef
  28.Raveau, B., et al.: J. Phys: Conds. Matter. 15, 7055–7062 (2003)ADS
  29.Zhu, D., et al.: J. Appl. Phys. 95, 4245–4250 (2004)ADS CrossRef
  30.Thanh, T.D., et al.: Phys. B 407, 145–152 (2012)ADS CrossRef
  31.Smolyaninova, V.N., et al.: J. Magn. Magn. Mater. 248, 348–354 (2002)ADS CrossRef
  32.Wang, K.F., et al.: Thin Solid Films 518, e38–e41 (2010)ADS CrossRef
  33.Tomioka, Y., et al.: Phys B 237–238, 6–10 (1997)CrossRef
  34.Lees, M.R., et al.: J. Phys: Condens. Matter. 8, 2967–2979 (1996)ADS
  35.Lees, M. R., et al.: Physica B 223&224, 532–534 (1996)CrossRef
  36.Raveau, B., Maignan, A., Martin, C.: J. Solid State Chem. 130, 162–166 (1997)ADS CrossRef
  37.Hebert, S., Maignan, A., Martin, C., Raveau, B. Solid State Comm. 121, 229–234 (2002)ADS CrossRef
  38.Shannon, R.D.: Acta Cryst. A 32, 751 (1976)CrossRef
  39.Vanitha, P.V., et al.: Chem. Mater. 12, 1666–1670 (2000)CrossRef
  40.Ri-Zhu, C.H.Y.: J. Mater Sci. 42, 660–668 (2007)ADS CrossRef
  41.Uthra, D., Singha, R.K.: Optoelectronic and advanced materials- Rapid communication 4(3), 322–32 (2010)
  42.Panwar, N., Sen, V., Pandya, D.K., Agarwal, S.K.: J. Alloys Compd. 456, 479–484 (2008)CrossRef
  43.Li, Z.Q., et al.: J. Magn. Magn. Mater. 284, 133–139 (2004)
  44.Hwang, H.Y., Cheong, S.W., Ong, N.P., Batlogg, B.: Phys. Rev. Lett. 77, 2041–2044 (1996)ADS CrossRef
  45.Xiong, C.S., et al.: J. Alloys Compd. 474, 316–320 (2009)CrossRef
  46.Venkataiah, G., Huang, J.C.A., Reddy, P.V.: J. Magn. Magn. Mater. 322, 417–423 (2010)ADS CrossRef
  47.Lalitha, G., Reddy, P.V.: J. Alloys Compd. 494, 476–482 (2010)CrossRef
  48.Shaikh, M. W., Varshney, D.: Mater. Chem. Phys 134, 886–898 (2012)CrossRef
  49.Mott, N.F., Davis, E.A. Clarendon, Oxford (1971)
  50.Emin, D., Holstein, T.: Ann. Phys. 53, 439 (1969)ADS CrossRef
  
• 作者单位：N. Ibrahim (1)
  A. K. Yahya (1)
  
  1. Faculty of Applied Sciences, Universiti Teknologi MARA, 40450, Shah Alam, Selangor, Malaysia
  
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Superconductivity, Superfluidity and Quantum Fluids
  Magnetism and Magnetic Materials
  Condensed Matter
  Characterization and Evaluation Materials
  
• 出版者：Springer New York
• ISSN：1557-1947

文摘

The effects of Ba 2+ doping on the electrical and magnetic properties of charge-ordered Pr_0.6Ca_0.4MnO₃ were investigated through electrical resistivity and AC susceptibility measurements. X-ray diffraction data analysis showed an increase in unit cell volume with increasing Ba 2+ content indicating the possibility of substituting Ba 2+ for the Ca-site. Electrical resistivity measurements showed insulating behavior and a resistivity anomaly at around 220 K. This anomaly is attributed to the existence of charge ordering transition temperature, \(T^{\mathrm {R}}_{\text {CO}}\) for the x = 0 sample. The Ba-substituted samples exhibited metallic to insulator transition (MI) behavior, with transition temperature, T _MI, increasing from ∼98 K (x = 0.1) to ∼122 K (x = 0.3). AC susceptibility measurements showed ferromagnetic to paramagnetic (FM-PM) transition for Ba-substituted samples with FM-PM transition temperature, T _c, increasing from ∼121 K (x = 0.1) to ∼170 K (x = 0.3), while for x = 0, an antiferromagnetic to paramagnetic transition behavior with transition temperature, T _N, ∼170 K was observed. In addition, inverse susceptibility versus T plot showed a deviation from the Curie–Weiss behavior above T _c, indicating the existence of the Griffiths phase with deviation temperature, T _G, increasing from 160 K (x = 0.1) to 206 K (x = 0.3). Magnetoresistance, MR, behavior indicates intrinsic MR mechanism for x = 0.1 which changed to extrinsic MR for x > 0.2 as a result of Ba substitution. The weakening of charge ordering and inducement of ferromagnetic metallic (FMM) state as well as increase in both T _c and T _MI are suggested to be related to the increase of tolerance factor, τ, and increase of e _g −electron bandwidth as average ionic radius at A-site, <r _A> increased with Ba substitution. The substitution may have reduced MnO₆ octahedral distortion and changed the Mn–O–Mn angle which, in turn, promotes itinerancy of charge carrier and enhanced double exchange mechanism. On the other hand, increase in A-site disorder, which is indicated by the increase in σ 2 is suggested to be responsible for the widening of the difference between T _c and T _MI.