Enhanced Conductivity and High Thermal Stability of W-Doped SnO₂ Based on First-Principle Calculations

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• 作者：C. Z. Chen ; N. Y. Wen ; H. J. Chen ; Y. Li ; C. B. Cai
• 关键词：SnO2 ; First principle ; Conductivity ; Thermal stability
• 刊名：Brazilian Journal of Physics
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：47
• 期：1
• 页码：26-33
• 全文大小：
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics, general;
• 出版者：Springer US
• ISSN：1678-4448
• 卷排序：47

文摘

Tungsten (W)-doped SnO₂ is investigated by first-principle calculations, with a view to understand the effect of doping on the lattice structure, thermal stability, conductivity, and optical transparency. Due to the slight difference in ionic radius as well as high thermal and chemical compatibility between the native element and the heterogeneous dopant, the doped system changes a little with different deviations in the lattice constant from Vegard’s law, and good thermal stability is observed as the doping level reaches x = 0.125 in Sn_1-xW_xO₂ compounds. Nevertheless, the large disparities in electron configuration and electronegativity between W and Sn atoms will dramatically modify the electronic structure and charge distribution of W-doped SnO₂, leading to a remarkable enhancement of conductivity, electron excitation in the low energy region, and the consequent optical properties, while the visible transparency of Sn_1-xW_xO₂ is still preserved. Particularly, it is found that the optimal photoelectric properties of W-doped SnO₂ may be achieved at x = 0.03. These observations are consistent with the experimental results available on the structural, thermal, electronic, and optical properties of Sn_1-xW_xO₂, thus presenting a practical way of tailoring the physical behaviors of SnO₂ through the doping technique.