A simple process based on NH2- and CH3-terminated monolayers for low contact resistance and adherent Au electrode in bottom-contact OTFTs

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• 作者：Rahim Abdur ; Jeongeun Lim ; Kyunghoon Jeong…
• 关键词：3 ; aminopropyltriethoxysilane (APS) ; octadecyltrichlorosilane (OTS) ; self ; assembled monolayer (SAM) ; atmospheric pressure plasma ; bottom contact ; organic thin film transistor (OTFT)
• 刊名：Electronic Materials Letters
• 出版年：2016
• 出版时间：March 2016
• 年：2016
• 卷：12
• 期：2
• 页码：197-204
• 全文大小：2,744 KB
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• 作者单位：Rahim Abdur (1)
  Jeongeun Lim (1)
  Kyunghoon Jeong (1)
  Mohammad Arifur Rahman (2)
  Jiyoung Kim (3)
  Jaegab Lee (1)
  
  1. School of Advanced Material Engineering, Kookmin University, Seoul, 02707, Korea
  2. Department of Chemistry, University of Dhaka, Dhaka, 1000, Bangladesh
  3. Department of Materials Science & Engineering, The University of Texas at Dallas, Dallas, Texas, 75080-3021, USA
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Condensed Matter Physics
  Electronics, Microelectronics and Instrumentation
  Optical and Electronic Materials
  Thermodynamics
  Characterization and Evaluation of Materials
  
• 出版者：The Korean Institute of Metals and Materials, co-published with Springer Netherlands
• ISSN：2093-6788

文摘

An efficient process for the low contact resistance and adherent source/drain Au electrode in bottom-contact organic thin film transistors (OTFTs) was developed. This was achieved by using two different surface-functional groups of self-assembled monolayers, 3-aminopropyltriethoxysilane (APS), and octadecyltrichlorosilane (OTS), combined with atmospheric-pressure (AP) plasma treatment. Prior to the deposition of Au electrode, the aminoterminated monolayer self-assembles on SiO₂ dielectrics, enhancing the adhesion of Au electrode as a result of the acid-base interaction of Au with the amino-terminal groups. AP plasma treatment of the patterned Au electrode on the APS-coated surface activates the entire surface to form an OTS monolayer, allowing the formation of a high quality pentacene layer on both the electrode and active region by evaporation. In addition, negligible damage by AP plasma was observed for the device performance. The fabricated OTFTs based on the two monolayers by AP plasma treatment showed the mobility of 0.23 cm2/Vs, contact resistance of 29 kΩ-cm, threshold voltage of −1.63 V, and on/off ratio of 9.8 × 105, demonstrating the application of the simple process for robust and high-performance OTFTs.