The Study of 0.34?THz Monolithically Integrated Fourth Subharmonic Mixer Using Planar Schottky Barrier Diode
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  • 作者:Xiaodong Tong ; Qian Li ; Ning An ; Wenjie Wang…
  • 关键词:THz technology ; GaAs planar Schottky barrier diode ; Fourth subharmonic mixer ; Conversion loss
  • 刊名:International Journal of Infrared and Millimeter Waves
  • 出版年:2015
  • 出版时间:November 2015
  • 年:2015
  • 卷:36
  • 期:11
  • 页码:1112-1122
  • 全文大小:1,128 KB
  • 参考文献:1.Mehdi I., Mazed M., Dengler R., Pease A., Natzic M., Siegel P. H., Planar GaAs Schottky diodes integrated with quartz substrate circuitry for waveguide subharmonic mixers at 215 GHz, IEEE Microwave Symposium Digest, 2, 779, (1994)
    2.Thomas B., Maestrini A., Beaudin G., Design of a broadband sub-harmonic mixer using planar Schottky diodes at 330 GHz. Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on, 475, (2004)
    3.Cheung S. K., Cheung S. K., Extraction of schottky diode parameters from forward current–voltage characteristics. Applied Physics Letters, 49, 85, (1986).CrossRef
    4.Card H. C., Rhoderick E. H., Studies of tunnel mos diodes i. interface effects in silicon schottky diodes, Journal of Physics D Applied Physics, 4, 1589, (1971)CrossRef
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    6. http://?vadiodes.?com/?index.?php/?en/?products/?mixers??id=-92
  • 作者单位:Xiaodong Tong (1)
    Qian Li (1)
    Ning An (1)
    Wenjie Wang (1)
    Xiaodong Deng (1)
    Liang Zhang (1)
    Haitao Liu (1)
    Jianping Zeng (1)
    Zhiqiang Li (1)
    Hailing Tang (1)
    Yong-Zhong Xiong (1)

    1. Terahertz Semiconductor Device Laboratory of China Academy of Engineering Physics, Chengdu, China
  • 刊物类别:Physics and Astronomy
  • 刊物主题:None Assigned
  • 出版者:Springer New York
  • ISSN:1866-6906
文摘
A planar Schottky barrier diode with the designed Schottky contact area of approximately 3 μm2 is developed on gallium arsenide (GaAs) material. The measurements of the developed planar Schottky barrier diode indicate that the zero-biased junction capacitance Cj0 is 11.0 fF, the parasitic series resistance RS is 3.0 Ω, and the cut off frequency fT is 4.8 THz. A monolithically integrated fourth subharmonic mixer with this diode operating at the radio frequency (RF) signal frequency of 0.34 THz with the chip area of 0.6 mm2 is implemented. The intermediate frequency (IF) bandwidth is from DC to 40 GHz. The local oscillator (LO) bandwidth is 37 GHz from 60 to 97 GHz. The RF bandwidth is determined by the bandwidth of the on chip antenna, which is 28 GHz from 322 to 350 GHz. The measurements of the mixer demonstrated a conversion loss of approximately 51 dB. Keywords THz technology GaAs planar Schottky barrier diode Fourth subharmonic mixer Conversion loss

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