文摘
On the basis of a developed test structure, electromigration (EM) tests of Sn58Bi solder strips with lengths of 50 μm, 100 μm, and 150 μm were simultaneously conducted at a current density of 27 kA/cm2 at 373 K. Length-dependent EM behavior was detected, and the mechanism is discussed. Bi atoms were segregated to the anode side more easily as the strip length increased, which resulted in the formation of a thicker Bi-rich layer or Sn-Bi mixed hillocks. The results reveal the existence of back flow that depends on the solder joint length. The back flow is most likely caused by an oxide layer formed on the Sn58Bi solder. By measuring the thicknesses of the Bi-rich layers, the Bi drift velocities were obtained. The critical length of the solder joint and the critical product of the length and the current density were estimated to be 16 μm and 43 A/cm, respectively. This observation will assist design of advanced electronic devices to anticipate EM reliability.