Degradation behaviors of micro ball grid array (μBGA) solder joints under the coupled effects of electromigration and thermal stress
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- 作者：Baolei Liu ; Yanhong Tian ; Jingkai Qin…
- 刊名：Journal of Materials Science: Materials in Electronics
- 出版年：2016
- 出版时间：November 2016
- 年：2016
- 卷：27
- 期：11
- 页码：11583-11592
- 全文大小：4,358 KB
- 刊物类别：Chemistry and Materials Science
- 刊物主题：Chemistry
Optical and Electronic Materials
Characterization and Evaluation Materials - 出版者：Springer New York
- ISSN：1573-482X
- 卷排序：27
文摘
Due to the complicated configuration of real micro ball grid array (μBGA) package, kinds of physical failure mechanisms occurs and mixed together in high current density applications. By considering electromigration and thermal stress-related effects, the degradation behaviors of actual μBGA solder joints were studied under the current density of 1 × 104 A cm−2 at 120 °C. Experimental results indicated that severe current crowding and open failure occurred at the narrow on-chip metal trace. At the current crowding region, the Ni under bump metallization was dissolved under the electromigration coupled with the thermal stress-induced stress migration, while the narrow Cu trace were consumed by the dominated electromigration. Meanwhile, the Sn and Pb atoms backfilled the vacancies formed by the migration of Cu and Ni. With the joule heat-induced temperature increasing, the backstress released, and those backfilled Sn and Pb atoms were migrated away, resulting in the final open failure. Additionally, due to polarity effect, the excessive growth of dendritic (Cu, Ni)6Sn5 compounds at anode side was also a potential source of failure in microelectronic devices.