Evidence of Silicon Band-Edge Emission Enhancement When Interfaced with SiO2:Er Films
详细信息 查看全文
- 作者：S. Abedrabbo ; A. T. Fiory ; N. M. Ravindra
- 刊名：JOM
- 出版年：2017
- 出版时间：February 2017
- 年：2017
- 卷：69
- 期：2
- 页码：241-246
- 全文大小：
- 刊物类别：Chemistry and Materials Science
- 刊物主题：Engineering, general; Chemistry/Food Science, general; Physics, general; Environment, general; Earth Sciences, general;
- 出版者：Springer US
- ISSN：1543-1851
- 卷排序：69
文摘
Nearly two-orders of magnitude increase in room-temperature band-to-band (1.067 eV) infrared emission from crystalline silicon, coated with erbium-doped sol–gel films, have been achieved. Phonon-assisted band-to-band emission from coated and annealed p-Si is strongest for the sample annealed at 700°C. In this paper, evidence of the origin of the emission band from the band edge recombination activities is established. Enhancement of radiative recombination of free carriers is reasoned by stresses at the interface due to the annealed sol–gel-deposited silica. Comparative studies with other strained silicon samples are presented.