Two-dimensional growth of germanium under a diffusion limited aggregation environment

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• 作者：Jaejun Lee ; Sung Wook Kim ; Youn Ho Park ; Jeong Min Park…
• 关键词：germanium nanosheets ; diffusion limited aggregation ; two dimensional growth
• 刊名：Electronic Materials Letters
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：13
• 期：1
• 页码：91-96
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Optical and Electronic Materials; Condensed Matter Physics; Nanotechnology and Microengineering; Characterization and Evaluation of Materials; Nanotechnology;
• 出版者：The Korean Institute of Metals and Materials
• ISSN：2093-6788
• 卷排序：13

文摘

The discovery of graphene has triggered immense interest in two-dimensional (2D) nanomaterials. However, the 2D growth of several layerstructured crystals such as graphene, MoS₂, and black phosphorus is difficult and limited. Here, we report the gas-phase 2D growth of germanium (Ge) with a cubic structure to form Ge nanosheets (GeNSs) using the chemical vapor deposition method. Our investigation revealed that a diffusion limited aggregation (DLA) environment is essential for the 2D growth of Ge that induces a dendritic growth in the <110> direction and suppresses the growth in the [111] direction. The growth behavior was similar to the 2D growth of silicon reported previously. Thus, it can be concluded that a DLA environment is essential for the 2D growth of cubic structured materials. The electron density and mobility of GeNSs were found to be 1.3 × 1015 cm−3 and 792 cm2/Vs, respectively, and their resistivity varied with the intensity of light.