Improvement of the quality of GaN epilayer by combining a SiNx interlayer and changed GaN growth mode

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• 作者：Dechao Yang (1)
  Hongwei Liang (2) (3)
  Yu Qiu (2)
  Shiwei Song (2)
  Yang Liu (2)
  Rensheng Shen (2)
  Yingmin Luo (2)
  Guotong Du (1) (2)
  
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2013
• 出版时间：August 2013
• 年：2013
• 卷：24
• 期：8
• 页码：2716-2720
• 全文大小：408KB
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• 作者单位：Dechao Yang (1)
  Hongwei Liang (2) (3)
  Yu Qiu (2)
  Shiwei Song (2)
  Yang Liu (2)
  Rensheng Shen (2)
  Yingmin Luo (2)
  Guotong Du (1) (2)
  
  1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130023, China
  2. School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, 116024, China
  3. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China
  

文摘

GaN epilayers with porous SiNx interlayer and changed growth modes were grown by metal–organic chemical vapor deposition on c-plane sapphire substrates. Comparing with GaN epilayer grown by ordinary method, the crystalline qualities were significantly improved. The improvement was attributed to the reduction of the density of threading dislocations causing by over-growth process combining with delayed coalescence of individual GaN islands. The influence of the deposition and annealing of nucleation layer on the GaN regrowth was also discussed.