Fabrication and photoluminescence of GaN nanowires prepared by ammoniating Ga2O3/BN films on Si substrate
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- 作者：Chengshan Xue (1)
Yuxin Wu (1)
Huizhao Zhuang (1)
Deheng Tian (1)
Yi’an Liu (1)
Jianting He (1)
Yujie Ai (1)
Lili Sun (1)
Fuxue Wang (1) - 关键词：magnetron sputtering ; GaN nanowires ; photoluminescence
- 刊名：Chinese Science Bulletin
- 出版年：2006
- 出版时间：July 2006
- 年：2006
- 卷：51
- 期：14
- 页码：1662-1665
- 全文大小：5511KB
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Yuxin Wu (1)
Huizhao Zhuang (1)
Deheng Tian (1)
Yi’an Liu (1)
Jianting He (1)
Yujie Ai (1)
Lili Sun (1)
Fuxue Wang (1)
1. Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, Jinan, 250014, China - ISSN：1861-9541
文摘
GaN nanowires were successfully prepared on Si(111) substrate through ammoniating Ga2O3/BN films deposited by radio frequency magnetron sputtering system. The synthesized nanowires were confirmed as hexagonal wurtzite GaN by X-ray diffraction, selected-area electron diffraction and Fourier transform infrared spectra. Scanning electron microscopy and transmission electron microscopy revealed that the grown GaN nanowires have a smooth and clean surface with diameters ranging from 40 to 160 nm and lengths typically up to several tens of micrometers. The representative photoluminescence spectrum at room temperature exhibited a strong UV light emission band centered at 363 nm and a relative weak purple light emission peak at 422 nm. The growth mechanism is discussed briefly.