A novel DMTL capacitive switch with electrostatic actuation MAM capacitors

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• 作者：Cheng Deng (1) dengcheng6@yeah.net
  Jingfu Bao (1) baojingfu@uestc.edu.cn
  Yijia Du (1) du.yijia@163.com
  Xinghai Zhao (2) xinghaiuestc@126.com
• 刊名：Microsystem Technologies
• 出版年：2012
• 出版时间：May 2012
• 年：2012
• 卷：18
• 期：5
• 页码：537-541
• 全文大小：501.6 KB
• 参考文献：1. Mahameed R, Rebeiz GM (2010) A high-power temperature-stable electrostatic RF MEMS capacitive switch based on a thermal buckle-beam design. J MEMS 19(4):816–826
  2. Peroulis D, Pacheco SP, Katehi LPB (2004) RF MEMS switches with enhanced power-handling capabilities. Microw Theory Tech 52(6):59–68
  3. Rebeiz GM (2003) RF MEMS theory, design, and technology. John Wiley & Sons, New York
  4. Reines I, Pillans B, Rebeiz GM (2010) Performance of temperature-stable RF MEMS switched capacitors under high RF power conditions. In: 2010 IEEE MTT-S Int Microwav Symp, Anaheim, CA, May 23–28, pp 292–295
  5. Yamazaki H, Ikehashi T, Saito T, Ogawa E, Masunaga T, Ohguro T, Sugizaki Y, Shibata H (2010) A high power-handling RF MEMS tunable capacitor using quadruple series capacitor structure. In: 2010 IEEE MTT-S Int Microwav Symp, Anaheim, CA, May 23–28, pp 1138–1141
• 作者单位：1. School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu, 611731 China2. China Academy of Engineering Physics, Mianyang, 621900 China
• 刊物类别：Engineering
• 刊物主题：Electronics, Microelectronics and Instrumentation
  Nanotechnology
  Mechanical Engineering
  Operating Procedures and Materials Treatment
  
• 出版者：Springer Berlin / Heidelberg
• ISSN：1432-1858

文摘

A novel DMTL capacitive switch with electrostatic actuation metal–air–metal (MAM) capacitors is presented. The top board of MAM capacitors will be pulled down together with the switch bridge. It has higher isolation in down-state than DMTL capacitive switch and has lower insert loss and higher self-actuation RF power comparing with MEMS shunt capacitive switch. Two of the novel DMTL capacitive switches are designed for high isolation and high self-actuation RF power, respectively. The calculated result shows that both of the two novel switches have lower insert loss than the MEMS shunt capacitive switch. The self-actuation RF power of them are 4 and 2.4 times that of MEMS shunt capacitive switch, respectively, at the cost of −6.23 and −3.54 dB reduction in isolation (30 GHz).