Effect of manganese concentration on physical properties of ZnS:Mn thin films prepared by chemical bath deposition

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• 作者：Abdelhak Jrad ; Wafa Naffouti ; Tarek Ben Nasr…
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：28
• 期：2
• 页码：1463-1471
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Optical and Electronic Materials; Characterization and Evaluation of Materials;
• 出版者：Springer US
• ISSN：1573-482X
• 卷排序：28

文摘

ZnS:Mn thin films were grown by chemical bath deposition technique on glass substrates for different doping ratios y = [Mn2+]/[Zn2+] (y = 0, 6, 12 and 18 at. %). Structural, morphological, optical and electrical properties were studied by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), UV–Vis–NIR spectrophotometry, spectrofluorimetry, Hall effect measurement. In fact, the XRD analysis showed that ZnS:Mn films were poorly crystalline. The average transmittance of all films was greater than 70 % in the visible range. The effect of Mn doping on refractive index, extinction coefficient and other optical parameters was also investigated. Measured electrical resistivity decreased slightly from 7.586 × 104 to 6.819 × 104 Ω cm with increasing of doping concentration from 0 to 6 at. % then it increased again to achieve 16.73 × 104 Ω cm for \(y\) equals to 18 at. %.