Effect of oxygen flow rate on the electrical and optical characteristics of dopantless tin oxide films fabricated by low pressure chemical vapor deposition
详细信息    查看全文
文摘
The effect of oxygen flow rate on the electrical and optical characteristics of dopantless tin oxide films prepared by low pressure chemical vapor deposition (LPCVD) was investigated. A decrease in the sheet resistance of the film with increasing oxygen flow rate in the range of 200-300 sccm was attributed to an increase in the film thickness (and correspondingly, in the grain size); while at oxygen flow rates higher than 300 sccm, the increase in the sheet resistance of the film resulted from an increase in the X-ray diffraction peak intensities of the (110), (101), and (201) planes. The optical bandgap of the film decreased when the oxygen flow rate was increased from 200 to 300 sccm, but it remained nearly constant for oxygen flow rates higher than 300 sccm. A maximum figure-of-merit was achieved for films prepared with an oxygen flow rate of 300 sccm.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700