Electron microscopy characterization of higher manganese silicide film structure on silicon
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- 作者：Andrey S. Orekhov ; T. S. Kamilov ; Anton S. Orekhov…
- 刊名：Nanotechnologies in Russia
- 出版年：2016
- 出版时间：September 2016
- 年：2016
- 卷：11
- 期：9-10
- 页码：610-616
- 全文大小：2,087 KB
- 刊物类别：Chemistry and Materials Science
- 刊物主题：Chemistry
Nanotechnology
Industrial and Production Engineering
Manufacturing, Machines and Tools
Russian Library of Science - 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
- ISSN：1995-0799
- 卷排序：11
文摘
The structure and composition of higher manganese silicide (HMS) films on Si(111) substrate are studied by high-resolution transmission electron microscopy, electron diffraction, and energy-dispersive X-ray spectroscopy. The formation of Mn4Si7 HMS film by the deposition of the gas-phase manganese onto silicon at 1040°C is observed. The film/substrate interface is semicoherent and does not contain any intermediate layer. The interface structure is refined by computer simulation. The orientation relationship \(\left( {\overline 1 \overline 2 4} \right)\left[ {443} \right]M{n_4}S{i_7}||\left( {1\overline 1 \overline 1 } \right)\left[ {001} \right]Si\) between the film and substrate is determined.