Electrical and Dielectric Properties of a n-Si Schottky Barrier Diode with Bismuth Titanate Interlayer: Effect of Temperature

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• 作者：M. Yıldırım ; C. Şahin ; Ş. Altındal ; P. Durmuş
• 关键词：MFS Schottky barrier diodes ; bismuth titanate ; electrical and dielectric properties ; temperature effect
• 刊名：Journal of Electronic Materials
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：46
• 期：3
• 页码：1895-1901
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Optical and Electronic Materials; Characterization and Evaluation of Materials; Electronics and Microelectronics, Instrumentation; Solid State Physics;
• 出版者：Springer US
• ISSN：1543-186X
• 卷排序：46

文摘

An Au/Bi₄Ti₃O₁₂/n-Si Schottky barrier diode (SBD) was fabricated with a 51 nm Bi₄Ti₃O₁₂ interfacial layer. Admittance measurements of the fabricated SBD were carried out in the bias voltage (V) range of −4 V and 6 V. Capacitance (C) and conductance (G/ω) measurements were carried out in a wide temperature range of 120–380 K so that temperature effects on electrical and dielectric properties of the SBD were investigated. Main electrical parameters were extracted from reverse bias C−2–V plots. It was found that variance of electrical and dielectric parameters of the SBD with temperature is basically different for low and high temperature regions. A fair number (∼1012 eV−1 cm−2) was obtained for surface states (N_ss); however, N_ss first decreased then increased with temperature. This result was associated with increased defects with temperature and higher activation energy in the high temperature region. Dielectric parameters of the SBD were also extracted and the dielectric constant of SBD was found as ∼10 at room temperature. Application of modulus formalism to the admittance data revealed temperature-activated dielectric relaxation at 340 K. Results showed that the temperature has considerable effects on electrical and dielectric properties of Au/Bi₄Ti₃O₁₂/n-Si SBD.