Formation of a Buffer Layer for Graphene on C-Face SiC{0001}
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- 作者：Guowei He (1)
N. Srivastava (1)
R. M. Feenstra (1) - 关键词：Thermal conductivity ; thermoelectrics ; interface ; layered oxides ; molecular dynamics ; phonon ; cobaltite
- 刊名：Journal of Electronic Materials
- 出版年：2014
- 出版时间：April 2014
- 年：2014
- 卷：43
- 期：4
- 页码：819-827
- 全文大小：719 KB
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N. Srivastava (1)
R. M. Feenstra (1)
1. Department of Physics, Carnegie Mellon University, Pittsburgh, PA, 15213, USA - ISSN：1543-186X
文摘
Graphene films prepared by heating the SiC $ (000\bar{1}) $ surface (the C-face of the {0001} surface) in a Si-rich environment have been studied using low-energy electron diffraction (LEED) and low-energy electron microscopy. Upon graphitization, an interface with $ \sqrt {43} \times \sqrt {43} - R \pm 7.6^\circ $ symmetry is observed by in?situ LEED. After oxidation, the interface displays $ \sqrt 3 \times \sqrt 3 - R 30^\circ $ symmetry. Electron reflectivity measurements indicate that these interface structures arise from a graphene-like “buffer layer-that forms between the graphene and the SiC, similar to that observed on Si-face SiC. From a dynamical LEED structure calculation for the oxidized C-face surface, it is found to consist of a graphene layer sitting on top of a silicate (Si2O3) layer, with the silicate layer having the well-known structure as previously studied on bare SiC $ (000\bar{1}) $ surfaces. Based on this result, the structure of the interface prior to oxidation is discussed.