Gas–surface reactions in the growth of dielectric films by chemical vapor deposition: The role of nonequilibrium surface diffusion of adsorbed precursors

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• 作者：S. Ya. Umanskii
• 关键词：molecule ; surface reaction site ; microscopic rate constant ; diffusion ; relaxation
• 刊名：Russian Journal of Physical Chemistry B, Focus on Physics
• 出版年：2016
• 出版时间：September 2016
• 年：2016
• 卷：10
• 期：5
• 页码：851-859
• 全文大小：439 KB
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Physical Chemistry
  Russian Library of Science
  
• 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
• ISSN：1990-7923
• 卷排序：10

文摘

A similarity between the diffusion equation and the Schrödinger equation is used to treat the problem of gas–surface reactions, with consideration given to the coupled processes of adsorption, surface chemical conversion, energy relaxation into the bulk, and surface diffusion over a regular one-dimensional chain of active surface sites. It is found that, in accordance with qualitative physical considerations, the nonequilibrium surface diffusion of the reaction precursor results, with an appreciable probability, in the formation of products not only at the initially attacked surface site, but also at neighboring sites.