Fabrication of high reflectivity nanoporous distributed Bragg reflectors by controlled electrochemical etching of GaN

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• 作者：Seung-Min Lee ; Jin-Ho Kang ; June Key Lee ; Sang-Wan Ryu
• 关键词：nanoporous ; distributed Bragg reflector ; GaN ; electrochemical etching
• 刊名：Electronic Materials Letters
• 出版年：2016
• 出版时间：September 2016
• 年：2016
• 卷：12
• 期：5
• 页码：673-678
• 全文大小：1,173 KB
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Condensed Matter Physics
  Electronics, Microelectronics and Instrumentation
  Optical and Electronic Materials
  Thermodynamics
  Characterization and Evaluation of Materials
  
• 出版者：The Korean Institute of Metals and Materials, co-published with Springer Netherlands
• ISSN：2093-6788
• 卷排序：12

文摘

The nanoporous medium is a valuable feature of optical devices because of its variable optical refractive index with porosity. One important application is in a GaN-based vertical cavity surface emitting laser having a distributed Bragg reflector (DBR) composed of alternating nanoporous and bulk GaNs. However, optimization of the fabrication process for high reflectivity DBRs having wellcontrolled high reflection bands has not been studied yet. We used electrochemical etching to study the fabrication process of a nanoporous GaN DBR and analyzed the relationship between the morphology and optical reflectivity. Several electrolytes were examined for the formation of the optimized nanoporous structure. A highly reflective DBRs having reflectivity of ~100% were obtained over a wide wavelength range of 450-750 nm. Porosification of semiconductors into nanoporous layers could provide a high reflectivity DBR due to controlled index-contrast, which would be advantages for the construction of a high-Q optical cavity.