Modeling of Threading Dislocation Density Reduction in Porous III-Nitride Layers

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• 作者：Dmitry M. Artemiev (1)
  Tatiana S. Orlova (1) (2)
  Vladislav E. Bougrov (1)
  Maxim A. Odnoblyudov (1)
  Alexei E. Romanov (1) (2) (3)
  
  1. ITMO University ; Kronverksky ; 49 ; 198205 ; Saint Petersburg ; Russia
  2. A.F.Ioffe Physical Technical Institute ; Polytekhnicheskaya ; 26 ; 194021 ; Saint Petersburg ; Russia
  3. Togliatti State University ; Belorusskaya ; 14 ; 445667 ; Togliatti ; Russia
  
• 关键词：Reaction ; kinetics model ; threading dislocations ; porous III ; nitride layers
• 刊名：Journal of Electronic Materials
• 出版年：2015
• 出版时间：May 2015
• 年：2015
• 卷：44
• 期：5
• 页码：1287-1292
• 全文大小：345 KB
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• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  Electronics, Microelectronics and Instrumentation
  Solid State Physics and Spectroscopy
  
• 出版者：Springer Boston
• ISSN：1543-186X

文摘

In this work, we report on the results of the theoretical analysis of threading dislocation (TD) density reduction in porous III-nitride layers grown in polar orientation. The reaction-kinetics model originally developed for describing TD evolution in growing bulk layers has been expanded to the case of the porous layer. The developed model takes into account TD inclinations under the influence of the pores as well as trapping TDs into the pores. It is demonstrated that both these factors increase the probability of dislocation reactions thus reducing the total density of TDs. The mean pore diameter acts as an effective interaction radius for the reactions among TDs. The model includes the main experimentally observed features of TD evolution in porous III-nitride layers.