Investing the effectiveness of retention performance in a non-volatile floating gate memory device with a core-shell structure of CdSe nanoparticles

详细信息    查看全文

• 作者：Dong-Hoon Lee ; Jung-Min Kim ; Ki-Tae Lim ; Hyeong Jun Cho…
• 关键词：retention ; nanoparticle ; core ; shell structure ; organic memory ; pentacene
• 刊名：Electronic Materials Letters
• 出版年：2016
• 出版时间：March 2016
• 年：2016
• 卷：12
• 期：2
• 页码：276-280
• 全文大小：1,148 KB
• 参考文献：1.R. J. Tseng, J. X. Huang, J. Ouyang, R. B. Kaner, and Y. Yang, Nano Lett. 5, 1077 (2005).CrossRef
  2.W. Lu and C. M. Lieber, Nat. Mater. 6, 841 (2007).CrossRef
  3.J. C. Scott and L. D. Bozano, Adv. Mater. 19, 1452 (2007).CrossRef
  4.Q. D. Ling, Y. Song, S. J. Ding, C. X. Zhu, D. S. H. Chan, D. L. Kwong, E. T. Kang, and K. G. Neoh, Adv. Mater. 17, 455 (2005).CrossRef
  5.L. E. Hueso, I. Bergenti, A. Riminucci, Y. Q. Zhan, and V. Dediu, Adv. Mater. 19, 2639 (2007).CrossRef
  6.M. N. Kozicki, C. Gopalan, M. Balakrishnan, and M. Mitkova, IEEE Trans. Nanotechnol. 5, 535 (2006).CrossRef
  7.S. H. Lee, Y. Jung, and R. Agarwal, Nat. Nanotechnol. 2, 626 (2007).CrossRef
  8.C.-H. Ji, I.-S. Oh, and S.-Y. Oh, Electron. Mater. Lett. 11, 795 (2015).CrossRef
  9.S. C. Yoon and I. C. Hwang, Electron. Mater. Lett. 11, 41 (2015).CrossRef
  10.M. H. White, D. A. Adams, and J. K. Bu, IEEE Circuits Devices 16, 22 (2000).CrossRef
  11.Y. L. Yang and M. H. White, Solid-State Electron. 44, 949 (2000).CrossRef
  12.K. Kim and S. Y. Lee, Microelectron. Eng. 84, 1976 (2007).CrossRef
  13.J. S. Lee, C. S. Kang, Y. C. Shin, C. H. Lee, K. T. Park, J. S. Sel, V. Kim, B. I. Choe, J. S. Sim, J. Choi, and K. Kim, Jpn. J. Appl. Phys. Part 1, 45, 3213 (2006).CrossRef
  14.E. Kapetanakis, P. Normand, D. Tsoukalas, K. Beltsios, J. Stoemenos, S. Zhang, and J. Van Den Berg, Appl. Phys. Lett. 77, 3450 (2000).CrossRef
  15.C. Lee, J. H. Kwon, J. S. Lee, Y. M. Kim, Y. Choi, H. Shin, J. Lee, and B. H. Sohn, Appl. Phys. Lett. 91, 153506 (2007).CrossRef
  16.C. J. Kim, S. W. Ryu, Y. K. Choi, J. J. Chang, S. H. Bae, and B. H. Sohn, Appl. Phys. Lett. 93, 052106 (2008).CrossRef
  17.D. Gupta, M. Anand, S. W. Ryu, Y. K. Choi, and S. H. Yoo, Appl. Phys. Lett. 93, 224106 (2008).CrossRef
  18.S. J. Kim, Y. S. Park, S. H. Lyu, and J. S. Lee, Appl. Phys. Lett. 96, 033302 (2010).CrossRef
  19.S. M. Jung, H. J. Kim, B. J. Kim, Y. S. Kim, T. S. Yoon, and H. H. Lee, Appl. Phys. Lett. 97, 153302 (2010).CrossRef
  20.C. P. Collier, T. Vossmeyer, and J. R. Heath, Annu. Rev. Phys. Chem., 49, 371 (1998).CrossRef
  21.P. J. Thomas, G. U. Kulkami, and C. N. R. Rao, Chem. Phys. Lett. 321, 163 (2000).CrossRef
  22.J. De Blauwe, IEEE Trans. Nanotechnol. 1, 72 (2002).CrossRef
  23.S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbe, and K. Chan, Appl. Phys. Lett. 68, 1377 (1996).CrossRef
  
• 作者单位：Dong-Hoon Lee (1)
  Jung-Min Kim (2)
  Ki-Tae Lim (1)
  Hyeong Jun Cho (1)
  Jin Ho Bang (3)
  Yong-Sang Kim (1)
  
  1. School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 440-746, Korea
  2. Materials & Devices Lab., Corporate R&D Institute, Samsung Electro-Mechanics Co. Ltd., Suwon, 443-743, Korea
  3. Department of Chemistry and Applied Chemistry, Hanyang University, Ansan, 426-791, Korea
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Condensed Matter Physics
  Electronics, Microelectronics and Instrumentation
  Optical and Electronic Materials
  Thermodynamics
  Characterization and Evaluation of Materials
  
• 出版者：The Korean Institute of Metals and Materials, co-published with Springer Netherlands
• ISSN：2093-6788

文摘

In this paper, we empirically investigate the retention performance of organic non-volatile floating gate memory devices with CdSe nanoparticles (NPs) as charge trapping elements. Core-structured CdSe NPs or core-shell-structured ZnS/CdSe NPs were mixed in PMMA and their performance in pentacene based device was compared. The NPs and self-organized thin tunneling PMMA inside the devices exhibited hysteresis by trapping hole during capacitance-voltage characterization. Despite of core-structured NPs showing a larger memory window, the retention time was too short to be adopted by an industry. By contrast core-shell structured NPs showed an improved retention time of >10000 seconds than core-structure NCs. Based on these results and the energy band structure, we propose the retention mechanism of each NPs. This investigation of retention performance provides a comparative and systematic study of the charging/discharging behaviors of NPs based memory devices.