Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth

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• 作者：Kexiong Zhang (1)
  Hongwei Liang (1) (3)
  Rensheng Shen (1)
  Shiwei Song (1)
  Dongsheng Wang (1)
  Yang Liu (1)
  Xiaochuan Xia (1)
  Dechao Yang (2)
  Yingmin Luo (1)
  Guotong Du (1) (2)
  
• 刊名：Applied Physics A: Materials Science & Processing
• 出版年：2014
• 出版时间：September 2014
• 年：2014
• 卷：116
• 期：4
• 页码：1561-1566
• 全文大小：631 KB
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• 作者单位：Kexiong Zhang (1)
  Hongwei Liang (1) (3)
  Rensheng Shen (1)
  Shiwei Song (1)
  Dongsheng Wang (1)
  Yang Liu (1)
  Xiaochuan Xia (1)
  Dechao Yang (2)
  Yingmin Luo (1)
  Guotong Du (1) (2)
  
  1. School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian, 116024, China
  3. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China
  2. State Key Laboratory on Integrated Optoelectronics, School of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
  
• ISSN：1432-0630

文摘

Mg-doped, 1-μm-thick, p-type GaN films were grown by metal-organic chemical vapor deposition using indium-assisted method. The influence of flow rate ratio of indium to magnesium (In/Mg ratio) on the quality of p-GaN thin films was investigated by atomic force microscope, X-ray diffraction, Hall measurement and secondary ion mass spectroscopy. The surface roughness, crystalline quality and hole concentrations of p-GaN present a different variation tendency below and above 0.183 In/Mg ratio. The evolution process of indium-adlayer model considering adsorption, desorption and the transformation of indium mono-adlayer was proposed to explain the above phenomenon. Indium-assisted growth method can improve surface smoothness and crystalline quality of p-GaN effectively without affecting its electrical properties.