Improved quality of GaN epilayer grown on porous SiC substrate by in situ H2 pre-treatment

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• 作者：Shiwei Song (1)
  Rensheng Shen (1)
  Hongwei Liang (1) (2)
  Yang Liu (1)
  Xiaochuan Xia (1)
  Kexiong Zhang (1)
  Dechao Yang (3)
  Dongsheng Wang (1)
  Guotong Du (1) (3)
  
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2013
• 出版时间：September 2013
• 年：2013
• 卷：24
• 期：9
• 页码：3299-3302
• 全文大小：307KB
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• 作者单位：Shiwei Song (1)
  Rensheng Shen (1)
  Hongwei Liang (1) (2)
  Yang Liu (1)
  Xiaochuan Xia (1)
  Kexiong Zhang (1)
  Dechao Yang (3)
  Dongsheng Wang (1)
  Guotong Du (1) (3)
  
  1. School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, 116024, People鈥檚 Republic of China
  2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, People鈥檚 Republic of China
  3. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, People鈥檚 Republic of China
  

文摘

GaN epilayers were grown on the Si-terminated (0001) 6H-SiC substrates pre-treated by in situ H2 in metal organic chemical vapor deposition system. It was found that in situ H2 treatment brought a porous SiC surface. The influence of H2 pre-treatment conditions on SiC surface was carefully investigated. Moreover, our experiment demonstrated that the H2 pre-treatment can distinctly influence the GaN basic characteristics.