A GMR device based on a magnetic nanostructure with a \(\updelta \) -doping
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- 作者：Xu-Hui Liu ; Zheng-Hua Tang ; Yong-Hong Kong ; Xi Fu…
- 关键词：Magnetic nanostructure ; The \(\updelta \) ; doping ; Giant magnetoresistance (GMR) effect ; The magnetoresitance ratio (MR) ; Controllable GMR device
- 刊名：Journal of Computational Electronics
- 出版年：2017
- 出版时间：March 2017
- 年：2017
- 卷：16
- 期：1
- 页码：115-119
- 全文大小：
- 刊物类别：Engineering
- 刊物主题：Appl.Mathematics/Computational Methods of Engineering; Electrical Engineering; Theoretical, Mathematical and Computational Physics; Optical and Electronic Materials; Mechanical Engineering;
- 出版者：Springer US
- ISSN：1572-8137
- 卷排序：16
文摘
We study how to manipulate by the \(\updelta \)-doping a giant magnetoresistance (GMR) device, which can be realized experimentally by depositing two parallel ferromagnetic stripes on top and bottom of the semiconductor \(\hbox {GaAs/Al}_{x}\hbox {Ga}_{1-x}\mathrm{As}\) heterostructure. We demonstrate an obvious GMR effect in the device with a \(\updelta \)-doping. We also reveal that the magnetoresistance ratio depends not only on the weight but also on the position of the \(\updelta \)-doping. These interesting results will be helpful for designing controllable GMR devices.