Numerical simulation of the effect of non-steady-state conditions on the formation of concentration growth striations when growing crystals by the Bridgman method

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• 作者：V. A. Goncharov (1)
  A. N. Dormidontov (1)
  
• 刊名：Semiconductors
• 出版年：2014
• 出版时间：December 2014
• 年：2014
• 卷：48
• 期：13
• 页码：1716-1719
• 全文大小：222 KB
• 参考文献：1. G. Müller, / Grystal Growth from the Melt (Springer, 2011; Mir, Moscow, 1991).
  2. H. J. Scheel, J. Cryst. Growth. ass="a-plus-plus">287, 214 (2006). <a class="external" href="http://dx.doi.org/10.1016/j.jcrysgro.2005.10.100" target="_blank" title="It opens in new window">CrossRefa>
  3. M. M. Gonik and V. I. Boevkin, Upravl. Bolsh. Sist., No. 28, 211 (2010).
  4. V. A. Goncharov and E. V. Markov, Comput. Math. Math. Phys. ass="a-plus-plus">39, 81 (1999).
  5. V. A. Goncharov, Comput. Math. Math. Phys. ass="a-plus-plus">40, 1638 (2000).
  6. V. A. Goncharov and A. N. Dormidontov, Vestn. Mosk. Akad. Delov. Administr., Ser.: Filos., Sotsial. Estestv. Nauki, No. 3 (15), 154 (2012).
  
• 作者单位：V. A. Goncharov (1)
  A. N. Dormidontov (1)
  
  1. National Research University of Electronic Technology (MIET), 4806 proezd 5, Zelenograd, Moscow oblast, 124498, Russia
  
• ISSN：1090-6479

文摘

The effect of non-steady-state perturbations in the growth setup on the formation of microscopic dopant inhomogeneities in a crystal is studied. The inhomogeneity value for an error of temperature maintenance error of the heaters within 0.05- K and irregular cell displacements in the furnaces with a step from 0.01 to 0.1 mm is determined using numerical simulation. The results obtained can be used to formulate requirements for designing equipment for growing semiconductor crystals by the vertical Bridgman method.