Circularly polarized electroluminescence of light-emitting InGaAs/GaAs (III, Mn)V diodes on the basis of structures with a tunneling barrier

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• 作者：E. I. Malysheva ; M. V. Dorokhin ; M. V. Ved-/a> ; A. V. Kudrin…
• 刊名：Semiconductors
• 出版年：2015
• 出版时间：November 2015
• 年：2015
• 卷：49
• 期：11
• 页码：1448-1452
• 全文大小：310 KB
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• 作者单位：E. I. Malysheva (1) (2)
  M. V. Dorokhin (1) (2)
  M. V. Ved-/a> (1)
  A. V. Kudrin (1) (2)
  A. V. Zdoroveishchev (1) (2)
  
  1. Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, 603950, Russia
  2. Physical-Technical Research Institute of Nizhny Novgorod, Lobachevsky State University, Nizhny Novgorod, 603950, Russia
  
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Magnetism and Magnetic Materials
  Electromagnetism, Optics and Lasers
  Russian Library of Science
  
• 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
• ISSN：1090-6479

文摘

The comparative investigation of circularly polarized electroluminescence in Zener diodes based on InGaAs/n-GaAs/n +-GaAs/GaMnAs and InGaAs/n-GaAs/n +-GaAs/GaMnSb is carried out. It is established that the circularly polarized electroluminescence is associated with the spin injection of electrons from a ferromagnetic semiconductor layer. The luminescence parameters are determined by the properties of these layers. It is shown that the ferromagnetic properties of the GaMnSb layer allow us to obtain circularly polarized emission at room temperature from InGaAs/n-GaAs/n +-GaAs/GaMnSb heterostructures. Original Russian Text ? E.I. Malysheva, M.V. Dorokhin, M.V. Ved- A.V. Kudrin, A.V. Zdoroveishchev, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 11, pp. 1497-500.