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作者单位:V. I. Garmash (1) V. I. Egorkin (1) V. E. Zemlyakov (1) A. V. Kovalchuk (2) S. Yu. Shapoval (2)
1. National Research University 鈥淢IET鈥? Moscow, Russia 2. Institute for Problems of Technology of Microelectronics and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast, Russia
刊物类别:Physics and Astronomy
刊物主题:Physics Magnetism and Magnetic Materials Electromagnetism, Optics and Lasers Russian Library of Science
出版者:MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
ISSN:1090-6479
文摘
Dependence of the chemical composition of a film of plasma-chemical silicon nitride on the technological parameters of the deposition process is studied. The stages in which the process parameters are optimized in order to improve the masking properties of the film are described. A systematic study of the Fourier-transform infra-red (IR) spectra of plasma-chemical silicon-nitride films is carried out. It is found that the chemical resistance of a silicon-nitride film depends on the configuration in which hydrogen is incorporated into chemical bonds. Keywords plasma-enhanced chemical-vapor deposition silicon nitride Fourier-transform IR spectrometry