Monte Carlo study of non-quasiequilibrium carrier dynamics in III–N LEDs

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• 作者：Pyry Kivisaari ; Toufik Sadi ; Jani Oksanen ; Jukka Tulkki
• 关键词：III–Nitride LEDs ; Monte Carlo simulations ; Hot carriers ; Non ; equilibrium hole distribution
• 刊名：Optical and Quantum Electronics
• 出版年：2016
• 出版时间：February 2016
• 年：2016
• 卷：48
• 期：2
• 全文大小：409 KB
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• 作者单位：Pyry Kivisaari (1)
  Toufik Sadi (2)
  Jani Oksanen (3)
  Jukka Tulkki (3)
  
  1. Division of Solid State Physics, Lund University, Lund, Sweden
  2. School of Engineering, University of Glasgow, Glasgow, UK
  3. School of Science, Aalto University, Espoo, Finland
  
• 刊物主题：Optics, Optoelectronics, Plasmonics and Optical Devices; Electrical Engineering; Characterization and Evaluation of Materials; Computer Communication Networks;
• 出版者：Springer US
• ISSN：1572-817X

文摘

Hot carrier effects have been observed in recent measurements of III–Nitride (III–N) light-emitting diodes. In this paper we carry out bipolar Monte Carlo simulations for electrons and holes in a typical III–N multi-quantum well (MQW) LED. According to our simulations, significant non-quasiequilibrium carrier distributions exist in the barrier layers of the structure. This is observed as average carrier energies much larger than the \(1.5k_BT\) corresponding to quasi-equilibrium. Due to the small potential drop over the MQW being modest, the non-quasiequilibrium carriers can be predominantly ascribed to nnp and npp Auger processes taking place in the QWs. Further investigations are needed to determine the effects of hot carriers on the macroscopic device characteristics of real devices.