Electric field effects on exciton in the shape of transmission spectra in high-purity GaAs at room temperature

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• 作者：Durga Prasad Sapkota (1)
  Madhu Sudan Kayastha (2)
  Koichi Wakita (2)
  
  1. Research and development section ; Nepal Telecom ; Kathmandu ; Nepal
  2. Department of electrical and electronic engineering ; Chubu University ; Kasugai shi ; Matsumoto cho ; Aichi ; 1200 ; Japan
  
• 关键词：Electroabsorption ; Exciton ; High ; purity ; Extinction ratio
• 刊名：Optical and Quantum Electronics
• 出版年：2015
• 出版时间：February 2015
• 年：2015
• 卷：47
• 期：2
• 页码：203-210
• 全文大小：296 KB
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• 刊物主题：Optics, Optoelectronics, Plasmonics and Optical Devices; Electrical Engineering; Characterization and Evaluation of Materials; Computer Communication Networks;
• 出版者：Springer US
• ISSN：1572-817X

文摘

The electric field effects on the shape of transmission spectra associated with exciton including continuum band transition in ultra-high-purity GaAs have been theoretically studied at room temperature. We have calculated the Stark red shift, linewidth broadening of exciton, height of exciton peak and extinction ratio with applied electric field. The theoretical results are compared with experimental and found the close agreement between them.