Analytic compact model of ballistic and quasi-ballistic transport for cylindrical gate-all-around MOSFET including drain-induced barrier lowering effect

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• 作者：He Cheng (1) (3)
  Shigeyasu Uno (2) (3)
  Kazuo Nakazato (1)
  
  1. Department of Electrical Engineering and Computer Science ; Graduate School of Engineering ; Nagoya University ; Furo-cho ; Chikusa-ku ; Nagoya ; 464-8603 ; Japan
  3. JST ; CREST ; 5 Sanban-cho ; Chiyoda-ku ; Tokyo ; 102-0075 ; Japan
  2. Department of Electrical and Electronic Engineering ; Ritsumeikan University ; 1-1-1 Noji-Higashi ; Kusatsu ; Shiga ; 525-8577 ; Japan
  
• 关键词：Ballistic and quasi ; ballistic transport ; Cylindrical GAA MOSFET ; Compact model ; The DIBL effect
• 刊名：Journal of Computational Electronics
• 出版年：2015
• 出版时间：March 2015
• 年：2015
• 卷：14
• 期：1
• 页码：321-328
• 全文大小：1,933 KB
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• 刊物类别：Engineering
• 刊物主题：Electronic and Computer Engineering
  Optical and Electronic Materials
  Mathematical and Computational Physics
  Applied Mathematics and Computational Methods of Engineering
  Mechanical Engineering
  
• 出版者：Springer Netherlands
• ISSN：1572-8137

文摘

We propose an analytic compact model of drain current in the ballistic and quasi-ballistic modes for cylindrical gate-all-around MOSFETs incorporating drain-induced barrier lowering (DIBL) effect. The model is based on our previous work addressing an analytic compact model for all operation regions, where electrostatic potential profile along the channel has not been taken into account. In this paper, we introduce variation of electrostatic potential along the channel to model the DIBL effect in the subthreshold region. The resulting analytic compact model is tested against TCAD simulation, and good accuracy is demonstrated.