Polishing superhard material surfaces with gas-cluster ion beams

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• 作者：A. E. Ieshkin ; K. D. Kushkina ; D. S. Kireev ; Yu. A. Ermakov…
• 刊名：Technical Physics Letters
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：43
• 期：1
• 页码：95-97
• 全文大小：
• 刊物类别：Physics and Astronomy
• 刊物主题：Classical and Continuum Physics;
• 出版者：Pleiades Publishing
• ISSN：1090-6533
• 卷排序：43

文摘

We have studied the influence of bombardment with accelerated gas-cluster ions on the surface topography of silicon carbide and diamond. Atomic-force microscopy shows that exposure to 10-keV gas-cluster ions at a total dose above 1016 cm–2 leads to smoothing of the surface relief. The ion-etching rate and efficiency of the surface relief smoothing as dependent on the thickness of removed layer have been estimated. Raman-spectroscopy data show that surface irradiation with gas-cluster ions does not introduce defects into the crystalline structure of irradiated material.