On controlling the electronic states of shallow donors using a finite-size metal gate

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• 作者：E. A. Levchuk ; L. F. Makarenko
• 刊名：Semiconductors
• 出版年：2016
• 出版时间：January 2016
• 年：2016
• 卷：50
• 期：1
• 页码：89-96
• 全文大小：397 KB
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• 作者单位：E. A. Levchuk (1)
  L. F. Makarenko (1)
  
  1. Belarusian State University, ul. F. Skorina 4, Minsk, 220050, Belarus
  
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Magnetism and Magnetic Materials
  Electromagnetism, Optics and Lasers
  Russian Library of Science
  
• 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
• ISSN：1090-6479

文摘

The effect of an external electric field on the states of a shallow donor near a semiconductor surface is numerically simulated. A disk-shaped metal gate is considered as an electric-field source. The wavefunctions and energies of bound states are determined by the finite-element method. The critical characteristics of electron relocation between the donor and gate are determined for various gate diameters and boundary conditions, taking into account dielectric mismatch. The empirical dependences of these characteristics on the geometrical parameters and semiconductor properties are obtained. A simple trial function is proposed, which can be used to calculate the critical parameters using the Ritz variational method. Original Russian Text © E.A. Levchuk, L.F. Makarenko, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 1, pp. 89–96.