Simulation of Electronic Center Formation by Irradiation in Silicon Crystals

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• 作者：H. N. Yeritsyan ; A. A. Sahakyan ; N. E. Grigoryan…
• 关键词：Silicon ; irradiation ; Hall effect ; carrier concentration ; radiation defects ; energy levels
• 刊名：Journal of Electronic Materials
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：46
• 期：2
• 页码：841-847
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Optical and Electronic Materials; Characterization and Evaluation of Materials; Electronics and Microelectronics, Instrumentation; Solid State Physics;
• 出版者：Springer US
• ISSN：1543-186X
• 卷排序：46

文摘

We present the results of a study on localized electronic centers formed in crystals by external influences (impurity introduction and irradiation). The main aim is to determine the nature of these centers in the forbidden gap of the energy states of the crystal lattice. For the case of semiconductors, silicon (Si) was applied as model material to determine the energy levels and concentration of radiation defects for application to both doped and other materials. This method relies on solving the appropriate equation describing the variation of the charge carrier concentration as a function of temperature n(T) for silicon crystals with two different energy levels and for a large set of N₁, N₂ (concentrations of electronic centers at each level), and n values. A total of almost 500 such combinations were found. For silicon, energy level values of ε₁ = 0.22 eV and ε₂ = 0.34 eV were used for the forbidden gap (with corresponding slopes determined from experimental temperature-dependent Hall-effect measurements) and compared with photoconductivity spectra. Additionally, it was shown that, for particular correlations among N₁, N₂, and n, curve slopes of ε₁/2 = 0.11 eV, ε₂/2 = 0.17 eV, and α = 1/2(ε₁ + ε₂) = 0.28 eV also apply. Comparison between experimental results for irradiation of silicon crystals by 3.5-MeV energy electrons and Co60γ-quanta revealed that the n(T) curve slopes do not always coincide with the actual energy levels (electronic centers).