Formation of Self-Connected Si_0.8Ge_0.2 Lateral Nanowires and Pyramids on Rib-Patterned Si(1 1 10) Substrate

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• 作者：Lei Du ; Gang Chen ; Wei Lu
• 关键词：Germanium ; Lateral nanowires ; Finite ; element simulation ; Patterned template ; Molecular beam epitaxy
• 刊名：Nanoscale Research Letters
• 出版年：2017
• 出版时间：December 2017
• 年：2017
• 卷：12
• 期：1
• 全文大小：1974KB
• 刊物主题：Nanotechnology; Nanotechnology and Microengineering; Nanoscale Science and Technology; Nanochemistry; Molecular Medicine;
• 出版者：Springer US
• ISSN：1556-276X
• 卷排序：12

文摘

In this work, Si_0.8Ge_0.2 is deposited onto the rib-patterned Si (1 1 10) template oriented in the [1 −1 0] direction. Atomic force microscopy (AFM) reveals that the rib sidewalls reshape into pyramid-covered (0 0 1) and smooth {1 1 3} facets, respectively, while the {1 0 5} facets-bounded lateral SiGe nanowires dominate the rib top along the [5 5 −1] direction. At both the rib shoulder sites and the pyramid vacancy sites, self-connecting occurs between the meeting nanowire and pyramids to form elongated huts, which are driven by the minimization of the total energy density according to the finite-element simulations results. These results suggest a convenient solution to form lateral SiGe nanowires covering multi-faceted surfaces on the patterned template.