Effect of Al Doping on Performance of CuGaO2 p-Type Dye-Sensitized Solar Cells

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• 作者：D. Ursu ; N. Vaszilcsin ; R. Bănica ; M Miclau
• 关键词：hydrothermal synthesis ; photovoltaics ; semiconductors ; thermal analysis ; x ; ray diffraction
• 刊名：Journal of Materials Engineering and Performance
• 出版年：2016
• 出版时间：January 2016
• 年：2016
• 卷：25
• 期：1
• 页码：59-63
• 全文大小：592 KB
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• 作者单位：D. Ursu (1) (2)
  N. Vaszilcsin (1)
  R. Bănica (1) (2)
  M Miclau (2) (3)
  
  1. Politehnica University Timisoara, 2 Piata Victoriei Street, 300006, Timisoara, Romania
  2. The National Institute for Research and Development in Electrochemistry and Condensed Matter, 144 Dr. A. Păunescu Podeanu Street, 300569, Timisoara, Romania
  3. The National Institute for Research and Development in Electrochemistry and Condensed Matter, 1 Plautius Andronescu Street, Timisoara, Romania
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Characterization and Evaluation Materials
  Materials Science
  Tribology, Corrosion and Coatings
  Quality Control, Reliability, Safety and Risk
  Engineering Design
  
• 出版者：Springer New York
• ISSN：1544-1024

文摘

The p-type semiconductor Cu(I)-based delafossite transparent conducting oxides are good candidates to be used as hole collectors in dye-sensitized solar cells. The Al-doped CuGaO₂ has been synthesized by hydrothermal method and its properties have been investigated as cathode elements in ruthenium dye N719-sensitized solar cells. The photocurrent density (J _sc) and the open-circuit voltage (V _oc) for 5% Al-doped CuGaO₂ microparticles using N719 dye were approximately two times higher than undoped CuGaO₂ microparticles. The integration of aluminum dopants in the delafossite structure improves the photovoltaic performance of CuGaO₂ thin films, due to the excellent optical transparency of CuGaO₂ in the visible range as well as the improved electrical conductivity caused by the apparition of the intrinsic acceptor defect associate (Al _Cu •• 2O _i ″ )″ with tetrahedrally coordinated Al on the Cu-site.