Photodetectors based on CuInS2

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• 作者：S. V. Bulyarsky ; L. N. Vostretsova ; S. A. Gavrilov
• 刊名：Semiconductors
• 出版年：2016
• 出版时间：January 2016
• 年：2016
• 卷：50
• 期：1
• 页码：106-111
• 全文大小：260 KB
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• 作者单位：S. V. Bulyarsky (1)
  L. N. Vostretsova (1)
  S. A. Gavrilov (2)
  
  1. Ulyanovsk State University, Ulyanovsk, 432017, Russia
  2. National Research University of Electronic Technology “MIET”, Moscow, Zelenograd, 124498, Russia
  
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Magnetism and Magnetic Materials
  Electromagnetism, Optics and Lasers
  Russian Library of Science
  
• 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
• ISSN：1090-6479

文摘

It is shown that the processes of charge-carrier transport, which determine the “dark” current–voltage characteristics of photodetectors based on CuInS₂ and, consequently, the efficiency of light conversion, are of the tunneling–recombination type. These processes occur via electronic states within the band gap with an activation energy of 0.2 eV and a concentration on the order of 8 × 1016 cm–2. Original Russian Text © S.V. Bulyarsky, L.N. Vostretsova, S.A. Gavrilov, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 1, pp. 106–111.