A novel low distortion high linearity CMOS bootstrapped switch
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  • 作者:Zhang Zhang (1) (2)
    Mingxin Song (1)
    Chubin Wu (1)
    Guangjun Xie (1) (2)
  • 关键词:Bootstrapped switch ; Threshold voltage ; Nonlinear distortion ; TN47
  • 刊名:Journal of Electronics (China)
  • 出版年:2014
  • 出版时间:October 2014
  • 年:2014
  • 卷:31
  • 期:5
  • 页码:406-410
  • 全文大小:230 KB
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  • 作者单位:Zhang Zhang (1) (2)
    Mingxin Song (1)
    Chubin Wu (1)
    Guangjun Xie (1) (2)

    1. School of Electronic Science & Applied Physics, Hefei University of Technology, Hefei, 230009, China
    2. School of Information Science and Technology, Fudan University, Shanghai, 200433, China
  • ISSN:1993-0615
文摘
This paper proposes a novel low distortion high linearity CMOS bootstrapped switch, and the proposed switch can alleviate the nonlinear distortion of the on-resistance by eliminating first order signal-dependent variation of the overdrive voltage. Based on a 0.18 m μ standard CMOS process, the simulation results show that at 100 MHz sampling clock frequency and 49 MHz input signal with 2V pp, the proposed switch in differential mode has a Spurious-Free Dynamic Range (SFDR) of 90.1 dB.

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