Magnetic coupling in ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices
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- 作者：YuFei Cao (1)
YanYong Li (1)
YuanYuan Li (1)
GuanNan Wei (1)
Yang Ji (1)
KaiYou Wang (1) - 关键词：magnetic coupling ; magnetoresistance ; bilayer structure ; annealing ; anisotropic field
- 刊名：SCIENCE CHINA Physics, Mechanics & Astronomy
- 出版年：2014
- 出版时间：August 2014
- 年：2014
- 卷：57
- 期：8
- 页码：1471-1475
- 全文大小：539 KB
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YanYong Li (1)
YuanYuan Li (1)
GuanNan Wei (1)
Yang Ji (1)
KaiYou Wang (1)
1. The State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China - ISSN：1869-1927
文摘
We carefully investigated the ferromagnetic coupling in the as-grown and annealed ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices. We observed that the magnetic interaction between the two layers strongly affects the magnetoresistance of the GaMnAs layer with applying the out of plane magnetic field. After low temperature annealing, the magnetic easy axis of the AlGaMnAs layer switches from out of plane into in-plane and the interlayer coupling efficiency is reduced from up to 0.6 to less than 0.4. However, the magnetic coupling penetration depth for the annealed device is twice that of the as-grown bilayer device.