Investigation of LRS dependence on the retention of HRS in CBRAM
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- 作者：Xiaoxin Xu (1)
Hangbing Lv (1)
Hongtao Liu (1)
Qing Luo (1)
Tiancheng Gong (1)
Ming Wang (1)
Guoming Wang (1)
Meiyun Zhang (1)
Yang Li (1)
Qi Liu (1)
Shibing Long (1)
Ming Liu (1)
1. Laboratory of Nano-Fabrication and Novel Devices Integrated Technology ; Institute of Microelectronics ; Chinese Academy of Sciences ; #3 Beitucheng West Road ; Chaoyang District ; Beijing ; 100029 ; China - 关键词：Resistive random access memory (RRAM) ; High resistance state (HRS) ; Retention ; Quantum point contact (QPC) model
- 刊名：Nanoscale Research Letters
- 出版年：2015
- 出版时间：December 2015
- 年：2015
- 卷：10
- 期：1
- 全文大小：2,480 KB
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- 出版者：Springer US
- ISSN：1556-276X
文摘
The insufficient retention prevents the resistive random access memory from intended application, such as code storage, FPGA, encryption, and others. The retention characteristics of high resistance state (HRS) switching from different low resistance state (LRS) were investigated in a 1-kb array with one transistor and one resistor configuration. The HRS degradation was found strongly dependent on the LRS: the lower the resistance of the LRS (R LRS) is, the worse HRS retention will be. According to the quantum point contact model, the HRS corresponds to a tiny tunnel gap or neck bridge with atomic size in the filament. The degradation of HRS is due to the filling or widening of the neck point by the diffusion of copper species from the residual filament. As the residual filament is stronger in case of the lower R LRS, the active area around the neck point for copper species diffusion is larger, resulting in higher diffusion probability and faster degradation of HRS during the temperature-accelerated retention measurement.