Electrical transport and photoresponse properties of single-crystalline p-type Cd3As2 nanowires
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- 作者：TingYuan Duan ; Zheng Lou ; GuoZhen Shen
- 关键词：nanowires ; electrical transport ; photodetector ; 027801
- 刊名：SCIENCE CHINA Physics, Mechanics & Astronomy
- 出版年：2015
- 出版时间：February 2015
- 年：2015
- 卷：58
- 期：2
- 页码：1-6
- 全文大小：1,339 KB
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- 刊物主题：Physics
Chinese Library of Science
Mechanics, Fluids and Thermodynamics
Physics - 出版者：Science China Press, co-published with Springer
- ISSN：1869-1927
文摘
Cd3As2 is an important II–V group semiconductor with excellent electrical and optoelectronic properties. In this work, we report the large scale growth of single-crystalline Cd3As2 nanowires via a simple chemical vapor deposition method. Single nanowire field-effect transistors were fabricated with the as-grown Cd3As2 nanowires, which exhibited a high I on/I off of 104 with a hole mobility of 6.02 cm2V?s?. Photoresponse properties of the Cd3As2 nanowires were also investigated by illuminating the nanowires with white light by varying intensities. Besides, flexible photodetectors were also fabricated on flexible PET substrate, showing excellent mechanical stablility and flexible electro-optical properties under various bending states and bending cycles. Our results indicate that Cd3As2 nanowires can be the basic material of next generation electronic and optoelectronic devices.