Effect of non-spherical colloidal silica particles on removal rate in oxide CMP

详细信息    查看全文

• 作者：Hojun Lee ; Moonsung Kim ; Haedo Jeong
• 关键词：CMP ; Oxide ; Non ; spherical colloidal silica ; Mixed abrasive slurry ; Removal rate
• 刊名：International Journal of Precision Engineering and Manufacturing
• 出版年：2015
• 出版时间：December 2015
• 年：2015
• 卷：16
• 期：13
• 页码：2611-2616
• 全文大小：1,020 KB
• 参考文献：1.Lee, C., Lee, H., Jeong, M., and Jeong, H., 鈥淎 Study on the Correlation between Pad Property and Material Removal Rate in Cmp,鈥?Int. J. Precis. Eng. Manuf., Vol. 12, No. 5, pp. 917鈥?20, 2011.CrossRef MathSciNet
  2.Steigerwald, J. M., Murarka, S. P., and Gutmann, R. J., 鈥淐hemical Mechanical Planarization of Microelectronic Materials,鈥?Wiley, pp. 7鈥?2, 1997.
  3.Cook, L. M., 鈥淐hemical Processes in Glass Polishing,鈥?Journal of Non-Crystalline Solids, Vol. 120, No. 1, pp. 152鈥?71, 1990.CrossRef
  4.Tomozawa, M., 鈥淥xide CMP Mechanisms,鈥?Solid State Technology, Vol. 40, No. 7, pp. 169鈥?75, 1997.
  5.Nogami, M. and Tomozawa, M., 鈥淓ffect of Stress on Water Diffusion in Silica Glass,鈥?Journal of the American Ceramic Society, Vol. 67, No. 2, pp. 151鈥?54, 1984.CrossRef
  6.Kim, D. W., 鈥淐MP, Dominance of the Transition to Colloidal Silica,鈥?Chemical Journal Daily, 2005.
  7.Seo, Y.-J., Lee, W.-S., and Yeh, P., 鈥淚mprovements of Oxide- Chemical Mechanical Polishing Performances and Aging Effect of alumina and Silica Mixed Abrasive Slurries,鈥?Microelectronic Engineering, Vol. 75, No. 4, pp. 361鈥?66, 2004.CrossRef
  8.Park, S.-W., Seo, Y.-J., and Lee, W.-S., 鈥淎 Study on the Chemical Mechanical Polishing of Oxide Film using a Zirconia(ZrO2)-Mixed Abrasive Slurry (MAS),鈥?Microelectronic Engineering, Vol. 85, No. 4, pp. 682鈥?88, 2008.CrossRef
  9.Lee, H., Park, B., Jeong, S., Joo, S., and Jeong, H., 鈥淭he Effect of Mixed Abrasive Slurry on CMP of 6H-SiC Substrates,鈥?Journal of Ceramic Processing Research, Vol. 10, No. 3, pp. 378鈥?81, 2009.
  10.Takayuki, M. and Yoshida, K., 鈥淪tudy on Removing of Native Oxide during Silicon Wafer Polishing,鈥?Journal of the Japan Society for Precision Engineering, 2007.
  11.Liang, C., Wang, L., Liu, W., and Song, Z., 鈥淣on-Spherical Colloidal Silica Particles-Preparation, Application and Model,鈥?Colloids and Surfaces A: Physicochemical and Engineering Aspects, Vol. 457, pp. 67鈥?2, 2014.CrossRef
  12.Morioka, Y., Kinoshita, M., Haba, S., and Haas, N., 鈥淎n Approach to Slurry Characterization for CMP,鈥?Nitta Haas Research Paper, PacRim-CMP, pp. 153鈥?55, 2004.
  13.Xie, Y. and Bhushan, B., 鈥淓ffects of Particle Size, Polishing Pad and Contact Pressure in Free Abrasive Polishing,鈥?Wear, Vol. 200, No. 1, pp. 281鈥?95, 1996.CrossRef
  14.Choi, W., Abiade, J., Lee, S.-M., and Singh, R. K., 鈥淓ffects of Slurry Particles on Silicon Dioxide CMP,鈥?Journal of the Electrochemical Society, Vol. 151, No. 8, pp. G512鈥揋522, 2004.CrossRef
  15.Zhao, Y. and Chang, L., 鈥淎 Micro-Contact and Wear Model for Chemical-Mechanical Polishing of Silicon Wafers,鈥?Wear, Vol. 252, No. 3, pp. 220鈥?26, 2002.CrossRef
  16.Luo, J. and Dornfeld, D., 鈥淢aterial Removal Mechanism in Chemical Mechanical Polishing: Theory and Modeling,鈥?IEEE Transactions on Semiconductor Manufacturing, Vol. 14, No. 2, pp. 112鈥?33, 2001.CrossRef
  17.Lee, H. S., Jeong, H. D., and Dornfeld, D. A., 鈥淪emi-Empirical Material Removal Rate Distribution Model for SiO2 Chemical Mechanical Polishing (CMP) Processes,鈥?Precision Engineering, Vol. 37, No. 2, pp. 483鈥?90, 2013.CrossRef
  18.Jin, X. and Zhang, L. C., 鈥淎 Statistical Model for Material Removal Prediction in Polishing,鈥?Wear, Vols. 274鈥?75, pp. 203鈥?11, 2012.CrossRef
  19.Kim, H., 鈥淎 Study on the Interfacial Characteristics and Its Effect on Material Removal in CMP,鈥?Ph.D. Thesis, Department of Precision and Mechanical Engineering, Pusan National University, pp. 178鈥?89, 2003.
  20.Lee, H. and Jeong, H., 鈥淎nalysis of Removal Mechanism on Oxide CMP using Mixed Abrasive Slurry,鈥?Int. J. Precis. Eng. Manuf., Vol. 16, No. 3, pp. 603鈥?07, 2015.CrossRef
  
• 作者单位：Hojun Lee (1)
  Moonsung Kim (2)
  Haedo Jeong (3)
  
  1. School of Mechanical Engineering, Graduate School, Pusan National University, 2, Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, South Korea
  2. Research Team, Acenanochem. Co. Ltd, 33, Jaingongdan-ro, Jain-myeon, Gyeongsan-si, Gyeongsangbuk-do, 38551, South Korea
  3. School of Mechanical Engineering, Pusan National University, 2, Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, South Korea
  
• 刊物类别：Engineering
• 刊物主题：Industrial and Production Engineering
  Materials Science
  
• 出版者：Korean Society for Precision Engineering, in co-publication with Springer Verlag GmbH
• ISSN：2005-4602

文摘

Oxide CMP generally has used colloidal silica slurry and fumed silica slurry. To compensate the lower removal rate (RR) of colloidal silica slurry compared to the one of fumed silica slurry, the multi-step feeding method was used to produce a non-spherical silica particle, for which the existing spherical colloidal silica particle was combined with two to three particles. To improve the performances, the prepared non-spherical colloidal silica particles were assessed by both single and mixed abrasive slurry. The slurry has two different sizes, 30 nm and 70 nm, of spherical colloidal silica particles and 70nm of non-spherical colloidal silica particles. Through the experiments, it was found out that non-spherical colloidal silica slurry had the higher RR than spherical colloidal silica slurry, and its RR was similar to the one of fumed silica slurry. For mixed abrasive slurry, the combinations of spherical and spherical or spherical and non-spherical showed higher RR, which were 152.8% higher than single abrasive slurry and 19.3% higher than fumed silica slurry, and better surface roughness than the fumed silica slurry. Therefore, non-spherical colloidal silica particles are found to be efficient to gain a higher RR and a better surface roughness than the ones of fumed silica particles. Keywords CMP Oxide Non-spherical colloidal silica Mixed abrasive slurry Removal rate