Effect of glycine on copper CMP

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• 作者：Soocheon Jang ; Haedo Jeong ; Minjong Yuh…
• 关键词：Chemical mechanical planarization (CMP) ; Complexing agent ; Glycine ; Tafel extrapolation ; Polarization resistance
• 刊名：International Journal of Precision Engineering and Manufacturing-Green Technology
• 出版年：2016
• 出版时间：April 2016
• 年：2016
• 卷：3
• 期：2
• 页码：155-159
• 全文大小：472 KB
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• 作者单位：Soocheon Jang (1) (2)
  Haedo Jeong (1)
  Minjong Yuh (1) (2)
  Inho Park (1) (2)
  Jaehong Park (3)
  
  1. School of Mechanical Engineering, Pusan National University, 2, Busandaehak-ro, 63beon-gil, Geumjeong-gu, Busan, 46241, South Korea
  2. G&P Technology, #304 MEMSNANO Center, Pusan National University, 2, Busandaehak-ro, 63beon-gil, Geumjeong-gu, Busan, 46241, South Korea
  3. Nitta Haas Inc., 3-17-1, Kannabidai, Kyotanabe-shi, Kyoto, 610-0333, Japan
  
• 刊物类别：Industrial and Production Engineering; Energy Efficiency (incl. Buildings); Sustainable Development;
• 刊物主题：Industrial and Production Engineering; Energy Efficiency (incl. Buildings); Sustainable Development;
• 出版者：Korean Society for Precision Engineering
• ISSN：2198-0810

文摘

Chemical mechanical polishing (CMP) technology has been newly applied in printed circuit board (PCB) field for satisfying requirements from miniaturization of mobile devices. This paper focuses on the complexing agent to increase the removal rate for thick Cu layer. In order to find out optimum type and concentration of the complexing agent, experiments have been done in terms of electrochemical analysis, surface roughness and removal rate. As concentration of complexing agent (glycine) in slurry increased, it was confirmed that corrosion current density increased in potentio-dynamic curve since it promoted production of new Cu ion by decreasing amount of Cu ion of chemical reaction layer. Finally, it was possible to confirm that chemical reaction had a direct correlation with removal rate through CMP evaluation.