Chemical deposition of (311) textured CdIn2S4 thin films

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• 作者：P. A. Chate (1)
  D. J. Sathe (2)
  P. P. Hankare (3)
  
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2014
• 出版时间：May 2014
• 年：2014
• 卷：25
• 期：5
• 页码：2292-2296
• 全文大小：490 KB
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• 作者单位：P. A. Chate (1)
  D. J. Sathe (2)
  P. P. Hankare (3)
  
  1. Department of Chemistry, J.S.M. College, Alibag, Maharashtra, India
  2. Department of Chemistry, KIT’s Engineering College, Kolhapur, Maharashtra, India
  3. Department of Chemistry, Shivaji University, Kolhapur, Maharashtra, India
  
• ISSN：1573-482X

文摘

We have successfully deposited cadmium indium sulphide (CdIn2S4) thin films by simple dip method using malonic acid as complexing agent. Variation of thickness with time and temperature were studied. Deposited samples were characterized by X-ray diffraction (XRD). The absorption, electrical and photoelectrochemical properties are also studied. The XRD analysis shows that the film samples are in cubic structure. The optical band gap energy was found to be 2.25?eV. Activation energy was found to be 0.511 and 0.018?eV for higher temperature and lower temperature respectively. For CdIn2S4 photoelectrode, the open circuit voltage and short circuit current are found to be 125?mV and 86?mA respectively. The calculation shows the fill factor is 33.38?%. The power conversion efficiency is found to be 1.22?%.