Electronic structure and exchange interaction in Ga1–x Mn x As and In1–x Mn x Sb magnetic semiconductors
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- 作者：V. G. Yarzhemsky ; S. V. Murashov ; A. D. Izotov
- 关键词：diluted magnetic semiconductors ; spintronics ; exchange interaction
- 刊名：Inorganic Materials
- 出版年：2016
- 出版时间：February 2016
- 年：2016
- 卷：52
- 期：2
- 页码：89-93
- 全文大小：352 KB
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S. V. Murashov (1)
A. D. Izotov (1)
1. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, Moscow, 119991, Russia - 刊物类别：Chemistry and Materials Science
- 刊物主题：Chemistry
Inorganic Chemistry
Industrial Chemistry and Chemical Engineering
Materials Science
Russian Library of Science - 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
- ISSN：1608-3172
文摘
We have calculated the electronic structure of Ga1–x Mn x As and In1–x Mn x Sb diluted magnetic semiconductors and shown that, in agreement with recent photoelectron spectroscopy data, the Mn 4s and Mn 3d orbitals are hybridized with the valence band of the host semiconductor. A new approach has been developed for calculating exchange interaction in diluted magnetic semiconductors, which is based on the spin polarization of s-electrons at a magnetic center due to single-center exchange s–d matrix elements. The magnitude of exchange interaction calculated using Hartree–Fock atomic wave functions and the electrondensity-functional approach agrees well with previous data. Keywords diluted magnetic semiconductors spintronics exchange interaction