Radiation damage of $\backslash$hbox{In}_{0.53}\hbox{Ga}_{0.47}As photodiodes by high energy particles

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• 作者：Ohyam ; H. ; Kudou ; T. ; Simoen ; E. ; Claeys ; C. ; Takami ; Y. ; Sunaga ; H.
• 刊名：Journal of Materials Science Materials in Electronics
• 出版年：1999
• 出版时间：1999
• 年：1999
• 卷：10
• 期：5/6
• 页码：403-405
• 全文大小：87 KB

文摘

The performance degradation of $\backslash$hbox{In}_{0.53}\hbox{Ga}_{0.47}As p-i-n photodiodes, subjected to a 220-MeV carbon particle irradiation in the fluence range 10$^10$ to 10$^13$ cm$^-2$, is reported. It is shown that the increase of the dark current scales roughly with the displacement damage created in the n-type InGaAs region. The degradation of the photo-current, on the other hand, does not scale with the displacement damage, for all irradiations studied. Therefore, it is believed that the photo-current suffers from increased surface recombination, which is related to the ionization damage created in the passivation layer.