文摘
The performance degradation of As p-i-n photodiodes, subjected to a 220-MeV carbon particle irradiation in the fluence range 10 to 10 cm, is reported. It is shown that the increase of the dark current scales roughly with the displacement damage created in the n-type InGaAs region. The degradation of the photo-current, on the other hand, does not scale with the displacement damage, for all irradiations studied. Therefore, it is believed that the photo-current suffers from increased surface recombination, which is related to the ionization damage created in the passivation layer.