Multi-band conduction behaviour at the interface of LaAlO3/SrTiO3 heterostructures

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• 作者：Veerendra K. Guduru (1)
  A. McCollam (1)
  J. C. Maan (1)
  U. Zeitler (1)
  S. Wenderich (2)
  M. K. Kruize (2)
  A. Brinkman (2)
  M. Huijben (2)
  G. Koster (2)
  D. H. A. Blank (2)
  G. Rijnders (2)
  H. Hilgenkamp (2)
  
• 关键词：High magnetic fields ; Negative and positive MR ; Non ; linear Hall resistance
• 刊名：Journal of the Korean Physical Society
• 出版年：2013
• 出版时间：August 2013
• 年：2013
• 卷：63
• 期：3
• 页码：437-440
• 全文大小：174KB
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• 作者单位：Veerendra K. Guduru (1)
  A. McCollam (1)
  J. C. Maan (1)
  U. Zeitler (1)
  S. Wenderich (2)
  M. K. Kruize (2)
  A. Brinkman (2)
  M. Huijben (2)
  G. Koster (2)
  D. H. A. Blank (2)
  G. Rijnders (2)
  H. Hilgenkamp (2)
  
  1. High Field Magnet Laboratory and Institute of Molecules and Materials, Radboud University Nijmegen, Toernooiveld 7, NL-6525 ED, Nijmegen, The Netherlands
  2. Faculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, 7500 AE, Enschede, The Netherlands
  
• ISSN：1976-8524

文摘

We have measured the Hall resistance and magneto-resistance (MR) of LaAlO3/SrTiO3 heterojunctions at magnetic fields up to 30 T in a temperature range T = 4 K to 70 K. For temperature below 7 K and above 50 K the devices display linear Hall resistance, indicating that one type of charge carriers dominate the transport. For temperatures between 10 K and 40 K, the Hall resistance is strongly non-linear, and is accompanied by a large positive MR, which is governed by the component of magnetic field normal to the interface. This behaviour in the intermediate temperature regime can be related to thermally activated high-mobility carriers.