Suspended GaN-based nanostructure for integrated optics

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• 作者：Dan Bai ; Tong Wu ; Xin Li ; Xumin Gao ; Yin Xu ; Ziping Cao ; Hongbo Zhu…
• 刊名：Applied Physics B: Lasers and Optics
• 出版年：2016
• 出版时间：January 2016
• 年：2016
• 卷：122
• 期：1
• 全文大小：1,245 KB
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• 作者单位：Dan Bai (1)
  Tong Wu (2)
  Xin Li (1)
  Xumin Gao (1)
  Yin Xu (1)
  Ziping Cao (1)
  Hongbo Zhu (1)
  Yongjin Wang (1)
  
  1. Grünberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing, 210003, China
  2. Department of Nanomechanics, Tohoku University, Sendai, 980-8579, Japan
  
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Electromagnetism, Optics and Lasers
  Physical Chemistry
  Laser Technology and Physics and Photonics
  Quantum Optics, Quantum Electronics and Nonlinear Optics
  Optical Spectroscopy and Ultrafast Optics
  Physics and Applied Physics in Engineering
  
• 出版者：Springer Berlin / Heidelberg
• ISSN：1432-0649

文摘

We show the fabrication and characterization of a suspended GaN-based nanostructure in the visible wavelength region that combines InGaN/GaN multiple quantum wells (MQWs) active layer with rib waveguides and then creates multiple separate beamlets. It is implemented on a GaN-on-silicon platform, where silicon substrate is removed and suspended epitaxial films are thinned by back wafer etching technique. When the InGaN/GaN MQWs active layer is optically excited, part of the emitted light is confined inside epitaxial films and acts the light source. The lateral propagation direction is controlled by the rib waveguide, and the light intensity and the propagation mode can be tuned by changing the rib waveguide structure. Experimental and simulated results indicate the proposed suspended GaN-based structure is promising for the integration of emitting device with planar optical circuit in the visible wavelength region.