Strained Germanium–Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility
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- 作者：Yan Liu ; Jing Yan ; Hongjuan Wang ; Buwen Cheng…
- 关键词：Germanium–tin ; Metal ; oxide ; semiconductor field ; effect transistor (MOSFET) ; Mobility ; Strained
- 刊名：International Journal of Thermophysics
- 出版年：2015
- 出版时间：June 2015
- 年：2015
- 卷：36
- 期：5-6
- 页码：980-986
- 全文大小：525 KB
- 参考文献：1.J. Kouvetakis, J. Menendez, A.V.G. Chizmeshya, Annu. Rev. Mater. Res. 36, 497 (2006)ADS View Article
2.J.D. Sau, M.L. Cohen, Phys. Rev. B 75, 045208 (2007)ADS View Article
3.Y. Yang, S. Su, P. Guo, W. Wang, X. Gong, L. Wang, K.L. Low, G. Zhang, C. Xue, B. Cheng, G. Han, Y.-C. Yeo, in IEDM Technical Digest (San Francisco, CA, 2012), pp. 379-82
4.K.L. Low, Y. Yang, G. Han, W. Fan, Y.-C. Yeo, J. Appl. Phys. 112, 103715 (2012)ADS View Article
5.S. Gupta, B. Magyari-K?pe, Y. Nishi, K.C. Saraswat, J. Appl. Phys. 113, 073707 (2013)ADS View Article
6.V.R. D’Costa, C.S. Cook, A.G. Birdwell, C.L. Littler, M. Canonico, S. Zollner, J. Kouvetakis, J. Menéndez, Phys. Rev. B 73, 125207 (2006)
7.S. Su, B. Cheng, C. Xue, W. Wang, Q. Cao, H. Xue, W. Hu, G. Zhang, Y. Zuo, Q. Wang, Opt. Express 19, 6400 (2011)ADS View Article
8.G. Han, S. Su, C. Zhan, Q. Zhou, Y. Yang, L. Wang, P. Guo, W. Wang, C.P. Wong, Z.X. Shen, B. Cheng, Y.-C. Yeo, in IEDM Technical Digest (Washington, 2011), pp. 402-04
9.S. Gupta, R. Chen, B. Magyari-Kope, H. Lin, B. Yang, A. Nainani, Y. Nishi, J.S. Harris, K.C. Saraswat, in IEDM Technical Digest (Washington, DC, 2011), pp. 398-01
10.G. Han, S. Su, L. Wang, W. Wang, X. Gong, Y. Yang, Ivana, P. Guo, C. Guo, G. Zhang, J. Pan, Z. Zhang, C. Xue, B. Cheng, Y.-C. Yeo, in Technical Digest—Symposium on VLSI Technology (Hawaii, 2012), pp. 97-8
11.G. Han, S. Su, Q. Zhou, P. Guo, Y. Yang, C. Zhan, L. Wang, W. Wang, Q. Wang, C. Xue, B. Cheng, Y.-C. Yeo, IEEE Electron Device Lett. 33, 634 (2012)ADS View Article
12.L. Wang, S. Su, W. Wang, X. Gong, Y. Yang, P. Guo, G. Zhang, C. Xue, B. Cheng, G. Han, Y.-C. Yeo, Solid State Electron. 83, 66 (2013)ADS View Article
13.X. Gong, G. Han, B. Liu, L. Wang, W. Wang, Y. Yang, E.Y.-J. Kong, S. Su, C. Xue, B. Cheng, Y.-C. Yeo, IEEE Trans. Electron Devices 60, 1640 (2013)ADS View Article
14.X. Gong, G. Han, F. Bai, S. Su, P. Guo, Y. Yang, R. Cheng, D. Zhang, G. Zhang, C. Xue, B. Cheng, J. Pan, Z. Zhang, E.S. Tok, D. Antoniadis, Y.-C. Yeo, IEEE Electron Device Lett. 34, 339 (2013)ADS View Article
15.P. Guo, G. Han, X. Gong, B. Liu, Y. Yang, W. Wang, Q. Zhou, J. Pan, Z. Zhang, E.S. Tok, Y.-C. Yeo, J. Appl. Phys. 114, 044510 (2013)ADS View Article
16.R.R. Lieten, T. Maeda, W. Jevasuwan, H. Hattori, N. Uchida, S. Miura, M. Tanaka, J.W. Seo, J.P. Locquet, in International Conference on Solid-State Devices and Materials (Fukuoka, Japan, 2013), pp. 1202-203
17.S. Gupta, Y.-C. Huang, Y. Kim, E. Sanchez, K.C. Saraswat, IEEE Electron Device Lett. 34, 831 (2013)ADS View Article
18.S. Su, W. Wang, B. Cheng, G. Zhang, W. Hu, C. Xue, Y. Zuo, Q. Wang, J. Cryst. Growth 317, 43 (2011)ADS View Article
19.G. Groeseneken, H.E. Maes, N. Beltran, R.F.D. Keersmaecker, IEEE Trans. Electron Devices 31, 42 (1984)View Article
20.J.S. Brugler, P.G.A. Jespers, IEEE Trans. Electron Devices 16, 297 (1969)View Article
21.J. Mitard, K. Martens, B.D. Jaeger, J. Franco, C. Shea, C. Plourde,F.E. Leys, R. Loo, G. Hellings, G. Eneman, W. Wang, J.C. Lin, B. Kaczer, K.D. Meyer, T.?Hoffmann, S.D. Gendt, M. Caymax, M. Meuris, M.M. Heyns, in European Solid-State Device Research Conference (Athens, Greece, 2009), pp. 411-14
22.S.M. Sze, K.K. Ng, Physics of Semiconductor Devices, 3rd edn. (Wiley, Inc., Hoboken, NJ, 2007)
23.G. Niu, J.D. Cressler, S.J. Mathew, S. Subbanna, IEEE Trans. Electron Devices 46, 1912 (1999)ADS View Article
24.M.S. Lundstrom, IEEE Electron Device Lett. 22, 293 (2001)ADS View Article - 作者单位：Yan Liu (1)
Jing Yan (1)
Hongjuan Wang (1)
Buwen Cheng (2)
Genquan Han (1)
1. Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing, People’s Republic of China
2. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, People’s Republic of China - 刊物类别：Physics and Astronomy
- 刊物主题：Physics
Condensed Matter
Mechanics
Industrial Chemistry and Chemical Engineering
Physical Chemistry - 出版者：Springer Netherlands
- ISSN：1572-9567
文摘
Compressively strained \(\hbox {Ge}_{0.973}\hbox {Sn}_{0.027}\) and \(\hbox {Ge}_{0.925}\hbox {Sn}_{0.075}\) p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated with low-temperature \(\hbox {Si}_{2}\hbox {H}_{6}\) surface passivation. High crystallinity GeSn films epitaxially grown on a Ge(001) substrate are used for the device fabrication. The impacts of the Sn composition on the subthreshold swing \(S\), threshold voltage \(V_\mathrm{TH}\), on-state current \(I_\mathrm{ON}\), and effective hole mobility \(\mu _\mathrm{eff}\) of the devices are investigated. GeSn pMOSFETs with different Sn compositions show a similar \(S\), indicating almost the same midgap density of interface states \(D_\mathrm{it}\). A positive shift of \(V_\mathrm{TH}\) with an increase of the Sn composition is observed. A \(\hbox {Ge}_{0.925}\hbox {Sn}_{0.075}\) pMOSFET exhibits a significant improvement in \(I_\mathrm{ON}\) as compared to a device with a lower Sn composition, which is due to the superior hole mobility in a device with a higher Sn composition. \(\hbox {Ge}_{0.925}\hbox {Sn}_{0.075}\) pMOSFETs achieve a peak effective hole mobility \(\mu _\mathrm{eff}\) of \(500\,\hbox {cm}^{2}{\cdot }\hbox {V}^{-1}{\cdot } \hbox {s}^{-1}\), which is much higher than that of \(\hbox {Ge}_{0.973}\hbox {Sn}_{0.027}\) devices. The enhancement of the compressive strain and chemical effect in the channel region with increased Sn composition leads to an improvement of \(\mu _\mathrm{eff}\).