A Review on InGaSb Growth under Microgravity and Terrestrial Conditions Towards Future Crystal Growth Project Using Chinese Recovery Satellite SJ-10

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• 作者：Jianding Yu ; Yan Liu ; Xiuhong Pan ; Hongyang Zhao…
• 刊名：Microgravity Science and Technology
• 出版年：2016
• 出版时间：May 2016
• 年：2016
• 卷：28
• 期：2
• 页码：143-154
• 全文大小：3,494 KB
• 刊物类别：Engineering
• 刊物主题：Extraterrestrial Physics and Space Sciences
  Aerospace Technology and Astronautics
  Classical Continuum Physics
  
• 出版者：Springer Netherlands
• ISSN：1875-0494
• 卷排序：28

文摘

The paper reviewed the previous microgravity experiment using Chinese recovery satellite, the in-situ measurement of composition profile in the solution by X-ray penetration method and homogeneous growth of InGaSb by temperature freezing method under terrestrial condition for making clear the effect of gravity on the growth of InGaSb ternary alloy semiconductor crystals. The previous experimental results showed that the shape of solid/liquid interfaces and composition profile in the solution were significantly affected by gravity. Based on the previous microgravity experimental results, experimental conditions were investigated to grow homogeneous In _xGa _1−xSb with higher indium composition at Chinese recovery satellite SJ-10 in near future.KeywordsMicrogravityChinese recovery satelliteGravity effectAlloy semiconductorX-ray penetration methodTemperature freezing method